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参数资料
| 型号： | GS8662R36E-300 |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| 中文描述： | 2M X 36 DDR SRAM, 0.45 ns, PBGA165 |
| 封装： | 15 MM X 17 MM, 1MM PITCH, FPBGA-165 |
| 文件页数： | 7/37页 |
| 文件大小： | 942K |
| 代理商： | GS8662R36E-300 |
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Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
7/37
2005, GSI Technology
Background
Common I/O SRAMs, from a system architecture point of view, are attractive in read dominated or block transfer applications.
Therefore, the SigmaCIO DDR-II SRAM interface and truth table are optimized for burst reads and writes. Common I/O SRAMs
are unpopular in applications where alternating reads and writes are needed because bus turnaround delays can cut high speed
Common I/O SRAM data bandwidth in half.
Burst Operations
Read and write operations are “burst” operations. In every case where a read or write command is accepted by the SRAM, it will
respond by issuing or accepting four beats of data, executing a data transfer on subsequent rising edges of K and K#, as illustrated
in the timing diagrams. It is not possible to stop a burst once it starts. Four beats of data are always transferred. This means that it is
possible to load new addresses every other K clock cycle. Addresses can be loaded less often, if intervening deselect cycles are
inserted.
Deselect Cycles
Chip Deselect commands are pipelined to the same degree as read commands. This means that if a deselect command is applied to
the SRAM on the next cycle after a read command captured by the SRAM, the device will complete the four beat read data transfer
and then execute the deselect command, returning the output drivers to high-Z.A high on the LD# pin prevents the RAM from
loading read or write command
inputs and puts the RAM into deselect mode as soon as it completes all outstanding burst transfer operations.
SigmaCIO DDR-II B4 SRAM Read Cycles
The status of the Address, LD# and R/W# pins are evaluated on the rising edge of K. Because the device executes a four beat burst
transfer in
response to a read command, if the previous command captured was a read or write command, the Address, LD# and R/W# pins
are ignored. If the previous command captured was a deselect, the control pin status is checked.The SRAM executes pipelined
reads. The read command is clocked into the SRAM by a rising edge of K. After the next rising edge of K, the SRAM produces
data out in response to the next rising edge of C# (or the next rising edge of K#, if C and C# are tied high). The second beat of data
is transferred on the next rising edge of C, then on the next rising edge of C# and finally on the next rising edge of C, for a total of
four transfers per address load.
SigmaCIO DDR-II B4 SRAM Write Cycles
The status of the Address, LD# and R/W# pins are evaluated on the rising edge of K. Because the device executes a four beat burst
transfer in response to a write command, if the previous command captured was a read or write command, the Address, LD# and R/
W# pins are ignored at the next rising edge of K. If the previous command captured was a deselect, the control pin status is
checked.The SRAM executes “late write” data transfers. Data in is due at the device inputs on the rising edge of K following the
rising edge of K clock used to clock in the write command and the write address. To complete the remaining three beats of the burst
of four write transfer the SRAM captures data in on the next rising edge of K#, the following rising edge of K and finally on the
next rising edge of K#, for a total of four transfers per address load.
相关PDF资料 |
PDF描述 |
|---|---|
| GS8662R36E-300I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-333 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-333I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-167 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-167I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8662R36E-300I | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 72MBIT 2MX36 0.45NS 165FBGA - Trays |
| GS8662R36E-333 | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36E-333I | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-167 | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-167I | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
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