- 您现在的位置：买卖IC网 > PDF目录385337 > GS8662R36E-333 (GSI TECHNOLOGY) 72Mb SigmaCIO DDR-II Burst of 4 SRAM PDF资料下载
参数资料
| 型号： | GS8662R36E-333 |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| 中文描述： | 2M X 36 DDR SRAM, 0.45 ns, PBGA165 |
| 封装： | 15 MM X 17 MM, 1MM PITCH, FPBGA-165 |
| 文件页数： | 16/37页 |
| 文件大小： | 942K |
| 代理商： | GS8662R36E-333 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页当前第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页
Absolute Maximum Ratings
(All voltages reference to V
SS
)
Symbol
Description
Value
Unit
V
DD
Voltage on V
DD
Pins
–0.5 to 2.9
V
V
DDQ
Voltage in V
DDQ
Pins
–0.5 to V
DD
V
V
REF
Voltage in V
REF
Pins
–0.5 to V
DDQ
V
V
I/O
Voltage on I/O Pins
–0.5 to V
DDQ
+0.5 (
≤
2.9 V max.)
–0.5 to V
DDQ
+0.5 (
≤
2.9 V max.)
V
V
IN
Voltage on Other Input Pins
V
I
IN
Input Current on Any Pin
+/–100
mA dc
I
OUT
Output Current on Any I/O Pin
+/–100
mA dc
T
J
Maximum Junction Temperature
125
o
C
T
STG
Storage Temperature
–55 to 125
o
C
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
16/37
2005, GSI Technology
Recommended Operating Conditions
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
V
DD
1.7
1.8
1.9
V
I/O Supply Voltage
V
DDQ
1.7
1.8
1.9
V
Reference Voltage
V
REF
0.68
—
0.95
V
Notes:
1.
Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 1.4 V
≤
V
DDQ
≤
1.6 V (i.e., 1.5 V I/O)
and 1.7 V
≤
V
DDQ
≤
1.95 V (i.e., 1.8 V I/O) and quoted at whichever condition is worst case.
The power supplies need to be powered up simultaneously or in the following sequence: V
DD
,
V
DDQ
, V
REF
, followed by signal inputs. The
power down sequence must be the reverse. V
DDQ
must not exceed V
DD
..
2.
Operating Temperature
Parameter
Symbol
Min.
Typ.
Max.
Unit
Ambient Temperature
(Commercial Range Versions)
T
A
0
25
70
°
C
Ambient Temperature
(Industrial Range Versions)
T
A
–40
25
85
°
C
相关PDF资料 |
PDF描述 |
|---|---|
| GS8662R36E-333I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-167 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-167I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-200 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-200I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8662R36E-333I | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-167 | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-167I | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-200 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 72MBIT 2MX36 0.45NS 165FBGA - Trays |
| GS8662R36GE-200I | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
发布紧急采购，3分钟左右您将得到回复。