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参数资料
| 型号： | GS8662R36E-333I |
| 厂商： | GSI TECHNOLOGY |
| 元件分类： | DRAM |
| 英文描述： | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| 中文描述： | 2M X 36 DDR SRAM, 0.45 ns, PBGA165 |
| 封装： | 15 MM X 17 MM, 1MM PITCH, FPBGA-165 |
| 文件页数： | 15/37页 |
| 文件大小： | 942K |
| 代理商： | GS8662R36E-333I |
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Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
15/37
2005, GSI Technology
B4 State Diagram
Power-Up
NOP
Load New
Address
DDR Read
DDR Write
LOAD
READ
WRITE
LOAD
LOAD
LOAD
LOAD
Notes:
1.
2.
3.
The internal burst address counter is a 4-bit linear counter (i.e., when first address is A0, next internal burst address is A0+1).
“READ” refers to read active status with R/W = High, “WRITE” refers to write inactive status with R/W = Low.
“LOAD” refers to read new address active status with LD = Low, “LOAD” refers to read new address inactive status with LD = High.
LOAD
Increment
Read Address
Increment
Write Address
Always
Always
READ
WRITE
相关PDF资料 |
PDF描述 |
|---|---|
| GS8662R36GE-167 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-167I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-200 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-200I | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-250 | 72Mb SigmaCIO DDR-II Burst of 4 SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GS8662R36GE-167 | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-167I | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-200 | 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 72MBIT 2MX36 0.45NS 165FBGA - Trays |
| GS8662R36GE-200I | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
| GS8662R36GE-250 | 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM |
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