参数资料
型号: GS8662R36GE-333
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 72Mb SigmaCIO DDR-II Burst of 4 SRAM
中文描述: 2M X 36 DDR SRAM, 0.45 ns, PBGA165
封装: 15 MM X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
文件页数: 20/37页
文件大小: 942K
代理商: GS8662R36GE-333
Preliminary
GS8662R08/09/18/36E-333/300/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.01 9/2005
20/37
2005, GSI Technology
AC Electrical Characteristics
Parameter
Symbol
-333
-300
-250
-200
-167
Units
N
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Clock
K, K Clock Cycle Time
C, C Clock Cycle Time
t
KHKH
t
CHCH
3.0
3.5
3.3
4.2
4.0
6.3
5.0
7.88
6.0
8.4
ns
tTKC Variable
t
KCVar
0.2
0.2
0.2
0.2
0.2
ns
5
K, K Clock High Pulse Width
C, C Clock High Pulse Width
t
KHKL
t
CHCL
1.2
1.32
1.6
2.0
2.4
ns
K, K Clock Low Pulse Width
C, C Clock Low Pulse Width
t
KLKH
t
CLCH
1.2
1.32
1.6
2.0
2.4
ns
K to K High
C to C High
t
KHKH
1.35
1.49
1.8
2.2
2.7
ns
K, K Clock High to C, C Clock High
t
KHCH
0
1.3
0
1.45
0
1.8
0
2.3
0
2.8
ns
DLL Lock Time
t
KCLock
1024
1024
1024
1024
1024
cycle
6
K Static to DLL reset
Output Times
t
KCReset
30
30
30
30
30
ns
K, K Clock High to Data Output Valid
C, C Clock High to Data Output Valid
t
KHQV
t
CHQV
0.45
0.45
0.45
0.45
0.5
ns
3
K, K Clock High to Data Output Hold
C, C Clock High to Data Output Hold
t
KHQX
t
CHQX
–0.45
–0.45
–0.45
–0.45
–0.5
ns
3
K, K Clock High to Echo Clock Valid
C, C Clock High to Echo Clock Valid
t
KHCQV
t
CHCQV
0.45
0.45
0.45
0.45
0.5
ns
K, K Clock High to Echo Clock Hold
C, C Clock High to Echo Clock Hold
t
KHCQX
t
CHCQX
–0.45
–0.45
–0.45
–0.45
–0.5
ns
CQ, CQ High Output Valid
t
CQHQV
0.25
0.27
0.30
0.35
0.40
ns
7
CQ, CQ High Output Hold
t
CQHQX
–0.25
–0.27
–0.30
–0.35
–0.40
ns
7
K Clock High to Data Output High-Z
C Clock High to Data Output High-Z
t
KHQZ
t
CHQZ
0.45
0.45
0.45
0.45
0.5
ns
3
K Clock High to Data Output Low-Z
C Clock High to Data Output Low-Z
t
KHQX1
t
CHQX1
–0.45
–0.45
–0.45
–0.45
–0.5
ns
3
Setup Times
Address Input Setup Time
t
AVKH
0.4
0.4
0.5
0.6
0.7
ns
Control Input Setup Time
t
IVKH
0.4
0.4
0.5
0.6
0.7
ns
2
Data Input Setup Time
t
DVKH
0.28
0.3
0.35
0.4
0.5
ns
相关PDF资料
PDF描述
GS8662R36GE-333I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E-167 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E-167I 72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662R08E-200 72Mb SigmaCIO DDR-II Burst of 4 SRAM
相关代理商/技术参数
参数描述
GS8662R36GE-333I 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb SigmaCIO DDR-II Burst of 4 SRAM
GS8662S08BD-400 制造商:GSI Technology 功能描述:165 FBGA - Bulk
GS8662S08E 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08E-167 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM
GS8662S08E-167I 制造商:GSI 制造商全称:GSI Technology 功能描述:72Mb Burst of 2 DDR SigmaSIO-II SRAM