参数资料
型号: GS88136BT-250V
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
中文描述: 256K X 36 CACHE SRAM, 5.5 ns, PQFP100
封装: TQFP-100
文件页数: 20/36页
文件大小: 776K
代理商: GS88136BT-250V
AC Electrical Characteristics
Parameter
Symbol
-250
-200
-150
Unit
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
4.0
5.0
6.7
ns
Clock to Output Valid
tKQ
3.0
3.0
3.8
ns
Clock to Output Invalid
tKQX
1.5
1.5
1.5
ns
Clock to Output in Low-Z
tLZ
1
1.5
1.5
1.5
ns
Setup time
tS
1.2
1.4
1.5
ns
Hold time
tH
0.2
0.4
0.5
ns
Flow Through
Clock Cycle Time
tKC
5.5
6.5
7.5
ns
Clock to Output Valid
tKQ
5.5
6.5
7.5
ns
Clock to Output Invalid
tKQX
2.0
2.0
2.0
ns
Clock to Output in Low-Z
tLZ
1
2.0
2.0
2.0
ns
Setup time
tS
1.5
1.5
1.5
ns
Hold time
tH
0.5
0.5
0.5
ns
Clock HIGH Time
tKH
1.3
1.3
1.5
ns
Clock LOW Time
tKL
1.7
1.7
1.7
ns
Clock to Output in
High-Z
tHZ
1
1.5
2.5
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
2.5
3.0
3.8
ns
G to output in Low-Z
tOLZ
1
0
0
0
ns
G to output in High-Z
tOHZ
1
2.5
3.0
3.8
ns
ZZ setup time
tZZS
2
5
5
5
ns
ZZ hold time
tZZH
2
1
1
1
ns
ZZ recovery
tZZR
20
20
20
ns
GS88118/32/36B(T/D)-xxxV
Rev: 1.00 6/2006
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
20/36
2006, GSI Technology
Notes:
1.
2.
These parameters are sampled and are not 100% tested
ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold
times as specified above.
相关PDF资料
PDF描述
GS881E36AD-133I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-166T 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-200 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-200I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-200IT 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
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