GS881E18AD-225 PDF资料下载(24/37 页)512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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参数资料

型号：	GS881E18AD-225
厂商：	GSI TECHNOLOGY
元件分类：	DRAM
英文描述：	512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
中文描述：	512K X 18 CACHE SRAM, 6 ns, PBGA165
封装：	13 X 15 MM, 1 MM PITCH, FBGA-165
文件页数：	24/37页
文件大小：	662K
代理商：	GS881E18AD-225

GS881E18/36AT-250/225/200/166/150/133

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Rev: 1.03 11/2004

16/29

2001, GSI Technology

Notes:

1.

2.

These parameters are sampled and are not 100% tested

ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold

times as specified above.

AC Electrical Characteristics

Parameter

Symbol

-250

-225

-200

-166

-150

-133

Unit

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Pipeline

Clock Cycle Time

tKC

4.0

—

4.4

—

5.0

—

6.0

—

6.7

—

7.5

—

ns

Clock to Output Valid

tKQ

—

2.5

—

2.7

—

3.0

—

3.4

—

3.8

—

4.0

ns

Clock to Output Invalid

tKQX

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

ns

Clock to Output in Low-Z

tLZ

1

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

ns

Setup time

tS

1.2

—

1.3

—

1.4

—

1.5

—

1.5

—

1.5

—

ns

Hold time

tH

0.2

—

0.3

—

0.4

—

0.5

—

0.5

—

0.5

—

ns

Flow

Through

Clock Cycle Time

tKC

5.5

—

6.0

—

6.5

—

7.0

—

7.5

—

8.5

—

ns

Clock to Output Valid

tKQ

—

5.5

—

6.0

—

6.5

—

7.0

—

7.5

—

8.5

ns

Clock to Output Invalid

tKQX

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

ns

Clock to Output in Low-Z

tLZ

1

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

3.0

—

ns

Setup time

tS

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

1.5

—

ns

Hold time

tH

0.5

—

0.5

—

0.5

—

0.5

—

0.5

—

0.5

—

ns

Clock HIGH Time

tKH

1.3

—

1.3

—

1.3

—

1.3

—

1.5

—

1.7

—

ns

Clock LOW Time

tKL

1.5

—

1.5

—

1.5

—

1.5

—

1.7

—

2

—

ns

Clock to Output in

High-Z

tHZ

1

1.5

2.3

1.5

2.5

1.5

3.0

1.5

3.0

1.5

3.0

1.5

3.0

ns

G to Output Valid

tOE

—

2.3

—

2.5

—

3.2

—

3.5

—

3.8

—

4.0

ns

G to output in Low-Z

tOLZ

1

0

—

0

—

0

—

0

—

0

—

0

—

ns

G to output in High-Z

tOHZ

1

—

2.3

—

2.5

—

3.0

—

3.0

—

3.0

—

3.0

ns

ZZ setup time

tZZS

2

5

—

5

—

5

—

5

—

5

—

5

—

ns

ZZ hold time

tZZH

2

1

—

1

—

1

—

1

—

1

—

1

—

ns

ZZ recovery

tZZR

20

—

20

—

20

—

20

—

20

—

20

—

ns

相关PDF资料	PDF描述
GS881E18AD-225I	512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-225IT	512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-225T	512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-250	512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-250I	512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

相关代理商/技术参数	参数描述
GS881E18AD-225I	制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-225IT	制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-225T	制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-250	制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AD-250I	制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs

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