参数资料
型号: GS881E18AT-200
厂商: GSI TECHNOLOGY
元件分类: DRAM
英文描述: 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
中文描述: 512K X 18 CACHE SRAM, 6.5 ns, PQFP100
封装: TQFP-100
文件页数: 1/37页
文件大小: 662K
代理商: GS881E18AT-200
Revision: 2/3/05
GS881E18/32/36AD
Supplemental Datasheet Information
This supplemental information applies to the GS881E18/36AT datasheet, which you will
find attached to this document. This supplement includes a new package offering (the
165-bump BGA—Package D), as well as an additional organization (x32, which is only
offered in the 165 BGA for this part).
相关PDF资料
PDF描述
GS881E18AT-200I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AT-200IT 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-225T 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-250 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E32AD-250I 512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
相关代理商/技术参数
参数描述
GS881E18AT-200I 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AT-200IT 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AT-200T 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AT-225 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
GS881E18AT-225I 制造商:GSI 制造商全称:GSI Technology 功能描述:512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs