参数资料
型号: GSC4404
厂商: GTM CORPORATION
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N沟道增强型功率MOSFET
文件页数: 1/4页
文件大小: 338K
代理商: GSC4404
GSC4404
Page: 1/4
ISSUED DATE :2006/10/27
REVISED DATE :
G
G S
S C
C 44440044
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSC4404 uses advanced trench technology to provide excellent on-resistance, low gate charge and
operation with gate voltage as low as 2.5V.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for use as a load switch or in PWM applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
J
0.375 REF.
E
0.40
0.90
K
45°
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current, VGS@10V
ID @TA=25 :
8.5
A
Continuous Drain Current, VGS@10V
ID @TA=70 :
7.1
A
Pulsed Drain Current1
IDM
60
A
Total Power Dissipation
PD @TA=25 :
2.5
W
Linear Derating Factor
0.02
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient
Max.
Rthj-amb
50
/W
BVDSS
30V
RDS(ON)
24m
ID
8.5A
Pb Free Plating Product
相关PDF资料
PDF描述
GSC4407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4409 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4410 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4411DY P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4411 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
相关代理商/技术参数
参数描述
GSC4407 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4409 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4410 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4411 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET
GSC4411DY 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET