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参数资料
| 型号： | GSC4410 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 2/5页 |
| 文件大小： | 321K |
| 代理商： | GSC4410 |
GSC4410
Page: 2/5
ISSUED DATE :2005/03/01
REVISED DATE :2005/09/30B
Electrical Characteristics(Tj = 25
Unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.037
-
V/ :
Reference to 25 : , ID=1mA
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
20
-
S
VDS=15V, ID=10A
Gate-Source Leakage Current
IGSS
-
D100
nA
VGS= D20V
Drain-Source Leakage Current(Tj=25 : )
-
1
uA
VDS=30V, VGS=0
Drain-Source Leakage Current(Tj=55 : )
IDSS
-
25
uA
VDS=24V, VGS=0
-
11.5
13.5
VGS=10V, ID=10A
Static Drain-Source On-Resistance
RDS(ON)
-
16.5
20
m
VGS=4.5V, ID=5A
Total Gate Charge2
Qg
-
20
-
Gate-Source Charge
Qgs
-
3
-
Gate-Drain (“Miller”) Change
Qgd
-
11
-
nC
ID=10A
VDS=15V
VGS=5V
Turn-on Delay Time2
Td(on)
-
7.5
-
Rise Time
Tr
-
10.2
-
Turn-off Delay Time
Td(off)
-
29
-
Fall Time
Tf
-
33
-
ns
VDS=25V
ID=1A
VGS=5V
RG=3.3
RD=25
Input Capacitance
Ciss
-
955
-
Output Capacitance
Coss
-
555
-
Reverse Transfer Capacitance
Crss
-
204
-
pF
VGS=0V
VDS=15V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.3
V
IS=2.3A, VGS=0V, Tj=25 :
Continuous Source Current (Body Diode)
IS
-
2.3
A
VD=VG=0V, VS=1.3V
Pulsed Source Current (Body Diode)
1
ISM
-
50
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
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