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参数资料
| 型号： | GSC93BC56 |
| 厂商： | GTM CORPORATION |
| 英文描述： | Automotive Relays; V23076A1022C133 ( Tyco Electronics ) |
| 中文描述： | 2线串行EEPROM |
| 文件页数： | 4/8页 |
| 文件大小： | 295K |
| 代理商： | GSC93BC56 |
GSC93BC46/56/66
Page: 4/8
ISSUED DATE :2006/06/14
REVISED DATE :
Instruction set for the GSC93BC46
Address
Data
Instruction SB
OP
Code X8
X16
X8
X16
Comment
READ
1
10
A6 ~ A0
A5 ~ A0
Reads data stored at specified
memory location.
EWEN
1
00
11xxxxx
11xxxx
Write enable command (must be
issued before any erase or write
operation).
ERASE
1
11
A6 ~ A0
A5 ~ A0
Erases memory location An~A0
WRITE
1
01
A6 ~ A0
A5 ~ A0
D7 ~ D0 D15 ~ D0 Write to memory location An~A0
ERAL
1
00
10xxxxx
10xxxx
Erases all memory locations.
Valid only at VCC=4.5V to 5.5V
WRAL
1
00
01xxxxx
01xxxx
D7 ~ D0 D15 ~ D0 Write all memory locations.
Valid only at VCC=4.5V to 5.5V
EWDS
1
00
00xxxxx
00xxxx
Disables all erase or write
instructions
Note : The X’s in the address field represent don’t care values and must be clocked.
Instruction set for the GSC93BC56/66
Address
Data
Instruction SB
OP
Code X8
X16
X8
X16
Comment
READ
1
10
A8 ~ A0
A7 ~ A0
Reads data stored at specified
memory location.
EWEN
1
00
11xxxxxxx 11xxxxxx
Write enable command (must be
issued before any erase or write
operation).
ERASE
1
11
A8 ~ A0
A7 ~ A0
Erases memory location An~A0
WRITE
1
01
A8 ~ A0
A7 ~ A0
D7~D0
D15~D0 Write to memory location An~A0
ERAL
1
00
10xxxxxxx 10xxxxxx
Erases all memory locations.
Valid only at VCC=4.5V to 5.5V
WRAL
1
00
01xxxxxxx 01xxxxxx D7~D0
D15~D0 Write all memory locations.
Valid only at VCC=4.5V to 5.5V
EWDS
1
00
00xxxxxxx 00xxxxxx
Disables all erase or write
instructions
Note : The X’s in the address field represent don’t care values and must be clocked.
Function Description
The GSC93BC46/56/66 support 7 different instructions, which must be clocked serially using the CS, SK and
DI pins. Before sending each of these instructions, the CS pin must be pulled high followed by a START bit
(logic ‘1’). The next sequence includes a 2-bit Op Code and usually an 8 or 16-bit address. The next
description describes the various functions in the chip.
READ (READ): The Read (READ) instruction includes the Op Code (“10”) followed by the memory address
location to be read. After the instruction and address is sent, the data from the memory location can be clocked
out using the serial output pin DO. The data changes on the rising edge of the clock, so the falling edge can be
used to strobe the output.
Note that during shifting the last address bit, the DO pin is a dummy bit (logic “0”).
ERASE/WRITE (EWEN)): When the chip is first powered-on, no erase or write instructions can be issued.
Only when the Erase/Write Enable (EWEN) instruction is sent will the system be allowed to write to the chip.
The EWEN command only needs to be issued once after being powered-on. To disable the chip again, the
Erase/Write Disable (EWDS) command can be used.
相关PDF资料 |
PDF描述 |
|---|---|
| GSC93BC66 | Automotive Relays; V23076A1022D143 ( Tyco Electronics ) |
| GSC9431 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC9435M | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC945 | Automotive Relays; V23133A1001C133 ( Tyco Electronics ) |
| GSC9563 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GSC93BC66 | 制造商:GTM 制造商全称:GTM 功能描述:2-WIRE SERIAL EEPROMS |
| GSC9406 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC9410 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC9431 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSC9435 | 制造商:GTM 制造商全称:GTM 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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