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参数资料
| 型号： | GSC9435 |
| 厂商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P沟道增强型功率MOSFET |
| 文件页数： | 2/5页 |
| 文件大小： | 269K |
| 代理商： | GSC9435 |
GSC9435
Page: 2/5
ISSUED DATE :2005/02/23
REVISED DATE :2006/11/09C
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-30
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.037
-
V/ :
Reference to 25 , I
:
D=-1mA
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
10
-
S
VDS=-10V, ID=-5.3A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±16V
Drain-Source Leakage Current(Tj=25 )
:
-
-1
uA
VDS=-30V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
-5
uA
VDS=-24V, VGS=0
-
50
VGS=-10V, ID=-5.3A
Static Drain-Source On-Resistance
RDS(ON)
-
90
m
VGS=-4.5V, ID=-4.2A
Total Gate Charge2
Qg
-
28
-
Gate-Source Charge
Qgs
-
3
-
Gate-Drain (“Miller”) Change
Qgd
-
7
-
nC
ID=-5.3A
VDS=-15V
VGS=-10V
Turn-on Delay Time2
Td(on)
-
9
-
Rise Time
Tr
-
15
-
Turn-off Delay Time
Td(off)
-
75
-
Fall Time
Tf
-
40
-
ns
VDS=-15V
ID=-1A
VGS=-10V
RG=6
RD=15
Input Capacitance
Ciss
-
745
-
Output Capacitance
Coss
-
440
-
Reverse Transfer Capacitance
Crss
-
120
-
pF
VGS=0V
VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-0.75
-1.2
V
IS=-2.6A, VGS=0V, Tj=25 :
Continuous Source Current (Body Diode)
IS
-
-2.6
A
VD=VG=0V, VS=-1.2V
Pulsed Source Current (Body Diode)
1
ISM
-
-20
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
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