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参数资料
| 型号： | GSC9620 |
| 厂商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P沟道增强型功率MOSFET |
| 文件页数： | 2/5页 |
| 文件大小： | 330K |
| 代理商： | GSC9620 |
GSC9620
Page: 2/5
ISSUED DATE :2006/04/20
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-20
-
V
VGS=0, ID=-250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.037
-
V/ :
Reference to 25 : , ID=-1mA
Gate Threshold Voltage
VGS(th)
-
-1.0
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
28
-
S
VDS=-10V, ID=-9.5A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS=±8V
Drain-Source Leakage Current(Tj=25 : )
-
-1
uA
VDS=-20V, VGS=0
Drain-Source Leakage Current(Tj=70 : )
IDSS
-
-25
uA
VDS=-16V, VGS=0
-
20
VGS=-4.5V, ID=-9.5A
Static Drain-Source On-Resistance2
RDS(ON)
-
35
m
VGS=-2.5V, ID=-6.0A
Total Gate Charge2
Qg
-
30
-
Gate-Source Charge
Qgs
-
6
-
Gate-Drain (“Miller”) Change
Qgd
-
3.5
-
nC
ID=-9.5A
VDS=-10V
VGS=-5V
Turn-on Delay Time2
Td(on)
-
26
-
Rise Time
Tr
-
500
-
Turn-off Delay Time
Td(off)
-
70
-
Fall Time
Tf
-
300
-
ns
VDS=-10V
ID=-9.5A
VGS=-4.5V
RG=6
RD=1.05
Input Capacitance
Ciss
-
2158
-
Output Capacitance
Coss
-
845
-
Reverse Transfer Capacitance
Crss
-
230
-
pF
VGS=0V
VDS=-15V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.2
V
IS=-2.5A, VGS=0V, Tj=25 :
Continuous Source Current (Body Diode)
IS
-
-2.08
A
VD=VG=0V, VS=-1.2V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125 /W when mo
:
unted on Min. copper pad.
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