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参数资料
| 型号： | GSD2656 |
| 厂商： | GTM CORPORATION |
| 英文描述： | NPN EPITAXIAL TRANSISTOR |
| 中文描述： | npn型外延晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 147K |
| 代理商： | GSD2656 |
GSD2656
Page: 1/2
ISSUED DATE :2006/01/18
REVISED DATE :
G
G S
S D
D 22665566
N
N P
P N
N E
E P
P II T
T A
A X
X II A
A L
L T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSD2656 is designed for general purpose amplifier applications.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
:
Storage Temperature
Tstg
-55~+150
:
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
30
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
1
A
Total Power Dissipation
PD
225
mW
Electrical Characteristics (Ta = 25 : , unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
30
-
V
IC=10uA, IE=0
BVCEO
30
-
V
IC=1mA, IB=0
BVEBO
6
-
V
IE=10uA, IC=0
ICBO
-
100
nA
VCB=30V, IE=0
IEBO
-
100
nA
VEB=6V, IC=0
VCE(sat)
-
350
mV
IC=500mA, IB=25mA
*hFE
120
-
500
VCE=2V, IC=100mA
*fT
-
400
-
MHz
VCE=2V, IE=-100mA, f=100MHz
Cob
-
5
-
pF
VCB=10V, f=1MHz
*Pulsed Test
Classification Of hFE
Rank
EUC
EUD
EUE
Range
120 ~ 200
160 ~ 300
250 ~ 500
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