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参数资料
| 型号： | GSD965 |
| 厂商： | GTM CORPORATION |
| 英文描述： | NPN EPITAXIAL PLANAR TRANSISTOR |
| 中文描述： | 瑞展晶体管 |
| 文件页数： | 1/2页 |
| 文件大小： | 153K |
| 代理商： | GSD965 |
CORPORATION
1/2
ISSUED DATE :2004/04/05
REVISED DATE :2004/11/29B
G
G S
S D
D 996655
N
N P
P N
N E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSD965 is designed for use as AF output amplifier and flash unit
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings at Ta = 25
Collector to Base Voltage
BVCBO
40
V
Collector to Emitter Voltage
BVCEO
20
V
Emitter to Base Voltage
BVEBO
7.0
V
Collector Current (Continuous)
IC
5
A
Collector Current (Peak PT=10mS)
IC
8
A
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Total Power Dissipation at Ta = 25 :
PD
0.75
W
Characteristics at Ta = 25
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
40
-
V
IC=100uA
BVCEO
20
-
V
IC=1mA
BVEBO
7
-
V
IE=10uA
ICBO
-
0.1
uA
VCB=60V
IEBO
-
0.1
uA
VEB=7V
*VCE(sat)
-
0.35
1
V
IC=3A, IB=0.1A
*hFE1
230
-
800
VCE=2V, IC=0.5A
*hFE2
150
-
VCE=2V, IC=2A
fT
-
150
-
MHz
VCE=6V, IE=50mA
Cob
-
50
pF
VCB=20V, f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
Classification Of hFE1
Rank
Q
R
S
Range
230-380
340-600
560-800
L
e1
b
e
SEATING
PLANE
b1
A
D
C
S1
E
TO-92
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GSD965A | 制造商:GTM 制造商全称:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| GSD965AA | 制造商:GTM 制造商全称:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| GSDA 30-2M | 制造商:TURCK Inc 功能描述:CORDSET, D SIZE, STRAIGHT MALE, MALE: 10 AWG, 3 PIN, 600V, 30A, 2 METER: PVC |
| GSDA 30-5M/S4000 | 制造商:TURCK Inc 功能描述:Cordset, 1 3/8-16UN, Male Straight, 3 Wire, 5 Meter, PVC, Black, U-37057 |
| GSDA 40-2M | 制造商:TURCK Inc 功能描述:CORDSET, D SIZE, STRAIGHT MALE, MALE: 10 AWG, 4 PIN, 600V, 25A, 2 METER: PVC |
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