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参数资料
| 型号： | GSIB6A20 |
| 厂商： | GENERAL SEMICONDUCTOR INC |
| 元件分类： | 桥式整流 |
| 英文描述： | 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE |
| 文件页数： | 1/2页 |
| 文件大小： | 41K |
| 代理商： | GSIB6A20 |
New
Product
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
GSIB6A20 GSIB6A40 GSIB6A60 GSIB6A80
Unit
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
V
Maximum RMS voltage
VRMS
140
280
420
560
V
Maximum DC blocking voltage
VDC
200
400
600
800
V
Maximum average forward rectified
TC = 100°C
6.0(1)
output current at
TA = 25°C
IF(AV)
2.8(2)
A
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
IFSM
150
A
Rating for fusing (t < 8.3ms)
I2t93
A2sec
Maximum thermal resistance per leg
R
θJA
22(2)
R
θJC
3.4 (1)
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
GSIB6A20 GSIB6A40 GSIB6A60 GSIB6A80
Unit
Maximum instantaneous forward voltage drop
per leg at 3.0A
VF
1.00
V
Maximum DC reverse current at
TA = 25°C
10
rated DC blocking voltage per leg
TA = 125°C
IR
250
A
Notes:
(1) Unit case mounted on Al plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5" (12 x 12mm) copper pads and 0.375" (9.5mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for
maximum heat transfer with #6 screw
2.5 ±0.2
2.2 ±0.2
1±0.1
10 ±0.2
7.5
±0.2
4
±
0.2
5
20
±
0.3
17
. 5
±
0.5
11
±
0.2
2.7 ±0.2
3.5
±
0.2
3.2
±
0.2
0.7 ±0.1
4.6 ±0.2
3.6 ±0.2
+
7.5
±0.2
30 ±0.3
Dimensions in millimeters
Case Style 5S
3/14/01
GSIB6A20 thru GSIB6A80
Glass Passivated Single-Phase
Bridge Rectifier
Rectifier Reverse Voltage 200 and 800V
Rectifier Forward Current 6.0A
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
High case dielectric strength of 1500 VRMS
Ideal for printed circuit boards
Glass passivated chip junction
High surge current capability
Mechanical Data
Case: 5S Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
260°C/10 seconds, 0.375 (9.5mm) lead length,
5lbs. (2.3kg) tension
Mounting Position: Any (3)
Mounting Torque: 5 in. - lb. max.
Weight: 0.26 ounce, 7.0 grams
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GSIB6A20_08 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Single-Phase Single In-Line Bridge Rectifiers |
| GSIB6A20-E3/45 | 功能描述:BRIDGE RECT 200V 2.8A GSIB-5S RoHS:是 类别:分离式半导体产品 >> 桥式整流器 系列:- 产品变化通告:Product Discontinuation 14/Mar/2011 标准包装:1,500 系列:- 电压 - 峰值反向(最大):1000V 电流 - DC 正向(If):1.5A 二极管类型:单相 速度:标准恢复 >500ns，> 200mA（Io） 反向恢复时间(trr):- 安装类型:表面贴装 封装/外壳:4-SMD 包装:带卷 (TR) 供应商设备封装:4-SDIP |
| GSIB6A40 | 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A |
| GSIB6A40-E3/45 | 功能描述:桥式整流器 200 Volt 6.0 Amp 150 Amp IFSM RoHS:否 制造商:Vishay 产品:Single Phase Bridge 峰值反向电压:1000 V 最大 RMS 反向电压: 正向连续电流:4.5 A 最大浪涌电流:450 A 正向电压下降:1 V 最大反向漏泄电流:10 uA 功率耗散: 最大工作温度:+ 150 C 长度:30.3 mm 宽度:4.1 mm 高度:20.3 mm 安装风格:Through Hole 封装 / 箱体:SIP-4 封装:Tube |
| GSIB6A60 | 制造商:GULFSEMI 制造商全称:Gulf Semiconductor 功能描述:SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER Voltage: 50 to 1000V Current: 6.0A |
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