参数资料
型号: GSMBT9013
厂商: GTM CORPORATION
英文描述: NPN EPITAXIAL TRANSISTOR
中文描述: npn型外延晶体管
文件页数: 1/2页
文件大小: 185K
代理商: GSMBT9013
1/2
ISSUED DATE :2004/12/20
REVISED DATE :
G
G S
S M
M B
B T
T 99001133
N
N P
P N
N E
E P
P II T
T A
A X
X II A
A L
L T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GSMBT9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
20
V
Emitter to Base Voltage
VEBO
5
V
Collector Current
IC
500
mA
Total Power Dissipation
PD
225
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
40
-
V
IC=100uA , IE=0
BVCEO
20
-
V
IC=1mA, IB=0
BVEBO
5
-
V
IE=100uA, IC=0
ICBO
-
100
nA
VCB=25V, IE=0
IEBO
-
100
nA
VEB=3V, IC=0
*VCE(sat)
-
0.6
V
IC=500mA, IB=50mA
*VBE(sat)
-
1.2
V
IC=500mA, IB=50mA
VBE(on)
-
0.9
V
VCE=1V, IC=10mA
*hFE1
112
180
300
VCE=1V, IC=50mA
*hFE2
40
-
VCE=1V, IC=500mA
fT
100
-
MHz
VCE=1V, IC=10mA, f=100MHz
Cob
-
8
pF
VCB=10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Classification Of hFE1
Rank
3BG
3BH
3BL
Range
112 - 166
144 - 202
176 - 300
相关PDF资料
PDF描述
GSMBT9014 NPN EPITAXIAL TRANSISTOR
GSMBT9015 PNP EPITAXIAL PLANAR TRANSISTOR
GSMBT9018 NPN EPITAXIAL PLANAR TRANSISTOR
GSMBTA05 NPN SILICON TRANSISTOR
GSMBTA06 NPN SILICON TRANSISTOR
相关代理商/技术参数
参数描述
GSMBT9014 制造商:GTM 制造商全称:GTM 功能描述:NPN EPITAXIAL TRANSISTOR
GSMBT9015 制造商:GTM 制造商全称:GTM 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR
GSMBT9018 制造商:GTM 制造商全称:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR
GSMBTA05 制造商:GTM 制造商全称:GTM 功能描述:NPN SILICON TRANSISTOR
GSMBTA06 制造商:GTM 制造商全称:GTM 功能描述:NPN SILICON TRANSISTOR