参数资料
型号: GSMBZ5221B
厂商: GTM CORPORATION
元件分类: 齐纳二极管
英文描述: Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
中文描述: 在250μA低电流操作,低反向漏,低噪声稳压二极管(250μA工作电流,小反向漏电流,低噪声,齐纳二极管)
文件页数: 1/9页
文件大小: 835K
代理商: GSMBZ5221B
1/9
ISSUED DATE :2004/11/15
REVISED DATE :
GSMBZ5221B~GSMBZ5270B
Description
ZENER DIODES
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
0.80
1.10
L1
0.42 REF.
A1
0
0.10
L
0.15
0.35
A2
0.80
1.00
b
0.25
0.40
D
1.80
2.20
c
0.10
0.25
E
1.15
1.35
e
0.65 REF.
HE
1.80
2.40
Q1
0.15 BSC.
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
Ta=25 ‘ , Derate above 25 ‘
PD
225
1.8
mW
mW/ ‘
Total Device Dissipation
Alumina Substrate**TA=25 ‘ , Derate above 25 ‘
PD
300
2.4
mW
mW/ ‘
Thermal Resistance Junction to Ambient
R JA
417
‘ /W
Junction and Storage Temperature
Tj,Tstg
-55 to +150
*FR-5 - 1.0 0.75 0.062 in. **Alumina-0.4 0.3 0.024 in. 99.5% alumina.
Thermal Characteristics (VF=0.9V Max @ IF=10mA for all types.)
Test
Current
Zener Voltage
Vz(V)
ZZK
IZ=0.25mA
ZZT
IZ=IZT
Max. Reverse
Current
Device
Marking
Code
IZT(mA)
Min
Nominal
Max
IR(uA)
@VR(V)
GSMBZ5221B
18A
20
2.280
2.4
2.520
1200
30
100
1.0
GSMBZ5222B
18B
20
2.375
2.5
2.625
1250
30
100
1.0
GSMBZ5223B
18C
20
2.565
2.7
2.835
1300
30
75
1.0
GSMBZ5224B
18D
20
2.660
2.8
2.940
1400
30
75
1.0
GSMBZ5225B
18E
20
2.850
3.0
3.150
1600
29
50
1.0
GSMBZ5226B
8A
20
3.135
3.3
3.465
1600
28
25
1.0
GSMBZ5227B
8B
20
3.420
3.6
3.780
1700
24
15
1.0
GSMBZ5228B
8C
20
3.705
3.9
4.095
1900
23
10
1.0
GSMBZ5229B
8D
20
4.085
4.3
4.515
2000
22
5.0
1.0
GSMBZ5230B
8E
20
4.465
4.7
4.935
1900
19
5.0
2.0
GSMBZ5231B
8F
20
4.845
5.1
5.355
1600
17
5.0
2.0
GSMBZ5232B
8G
20
5.320
5.6
5.880
1600
17
5.0
3.0
GSMBZ5233B
8H
20
5.700
6.0
6.300
1600
7.0
5.0
3.5
GSMBZ5234B
8J
20
5.890
6.2
6.510
1000
7.0
5.0
4.0
GSMBZ5235B
8K
20
6.460
6.8
7.140
750
5.0
3.0
5.0
GSMBZ5236B
8L
20
7.125
7.5
7.875
500
6.0
3.0
6.0
GSMBZ5237B
8M
20
7.790
8.2
8.610
500
8.0
3.0
6.5
GSMBZ5238B
8N
20
8.265
8.7
9.135
600
8.0
3.0
6.5
GSMBZ5239B
8P
20
8.645
9.1
9.555
600
10
3.0
7.0
GSMBZ5240B
8Q
20
9.500
10
10.500
600
17
3.0
8.0
相关PDF资料
PDF描述
GSMBZ5223B Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
GSMBZ5224B Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
GSMBZ5225B Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
GSMBZ5226B Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
GSMBZ5227B Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)
相关代理商/技术参数
参数描述
GSMBZ5223B 制造商:GTM 制造商全称:GTM 功能描述:ZENER DIODES
GSMBZ5224B 制造商:GTM 制造商全称:GTM 功能描述:ZENER DIODES
GSMBZ5225B 制造商:GTM 制造商全称:GTM 功能描述:ZENER DIODES
GSMBZ5226B 制造商:GTM 制造商全称:GTM 功能描述:ZENER DIODES
GSMBZ5227B 制造商:GTM 制造商全称:GTM 功能描述:ZENER DIODES