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参数资料
| 型号： | GSS4228 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 339K |
| 代理商： | GSS4228 |
GSS4228
Page: 1/4
ISSUED DATE :2005/04/12
REVISED DATE :2005/09/30B
G
G S
S S
S 44222288
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSS4228 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Low On-Resistance
*Simple Drive Requirement
*Dual N MOSFET Package
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0 C
8 C
J
0.375 REF.
E
0.40
0.90
K
45 C
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
f 20
V
Continuous Drain Current3
ID @TA=25 :
6.8
A
Continuous Drain Current3
ID @TA=70 :
5.5
A
Pulsed Drain Current1
IDM
40
A
Total Power Dissipation
PD @TA=25 :
2
W
Linear Derating Factor
0.016
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-amb
62.5
/W
BVDSS
30V
RDS(ON)
26m
ID
6.8A
Pb Free Plating Product
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相关代理商/技术参数 |
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| GSS-4-3.8-G | 制造商:MISCELLANEOUS 功能描述: 制造商:Interconnect Devices Inc (IDI) 功能描述:.100 center, chisel tip, .385 length., .060 travel |
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| GSS4500 | 制造商:GTM 制造商全称:GTM 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4501 | 制造商:GTM 制造商全称:GTM 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS4501S | 制造商:GTM 制造商全称:GTM 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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