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参数资料
| 型号： | GSS9926 |
| 厂商： | GTM CORPORATION |
| 英文描述： | Automotive Relays; V23134B0053C642 ( Tyco Electronics ) |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 330K |
| 代理商： | GSS9926 |
GSC4418
Page: 1/4
ISSUED DATE :2006/10/27
REVISED DATE :
G
G S
S C
C 44441188
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSC4418 uses advanced trench technology to provide excellent on-resistance and low gate charge.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for use as a load switch or in PWM applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0°
8°
J
0.375 REF.
E
0.40
0.90
K
45°
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±25
V
Continuous Drain Current3, VGS@20V
ID @TA=25 :
11.5
A
Continuous Drain Current3, VGS@20V
ID @TA=70 :
9.7
A
Pulsed Drain Current1
IDM
40
A
Total Power Dissipation
PD @TA=25 :
2.5
W
Linear Derating Factor
0.02
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient
Max.
Rthj-amb
50
/W
BVDSS
30V
RDS(ON)
14m
ID
11.5A
Pb Free Plating Product
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| GSS9926E | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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