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参数资料
| 型号： | GSS9926E |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 1/5页 |
| 文件大小： | 311K |
| 代理商： | GSS9926E |
GSS9926E
Page: 1/5
ISSUED DATE :2005/01/07
REVISED DATE :2005/09/29C
G
G S
S S
S 99992266E
E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSS9926E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
*Surface mount package
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0 C
8 C
J
0.375 REF.
E
0.40
0.90
K
45 C
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
f 12
V
Continuous Drain Current3, VGS@10V
ID @TA=25 :
6.0
A
Continuous Drain Current3, VGS@10V
ID @TA=70 :
4.8
A
Pulsed Drain Current1
IDM
20
A
Total Power Dissipation
PD @TA=25 :
2
W
Linear Derating Factor
0.016
W/
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-a
62.5
/W
BVDSS
20V
RDS(ON)
30m
ID
6A
Pb Free Plating Product
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相关代理商/技术参数 |
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| GSS9930 | 制造商:GTM 制造商全称:GTM 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS9936 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS9960 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS9962 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSS9971 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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