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参数资料
| 型号： | GSS9975 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 307K |
| 代理商： | GSS9975 |
GSS9975
Page: 1/4
ISSUED DATE :2005/11/16
REVISED DATE :
G
G S
S S
S 99997755
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GSS9975 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*High Breakdown Voltage
*Low On-resistance
*RoHS Compliant
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
5.80
6.20
M
0.10
0.25
B
4.80
5.00
H
0.35
0.49
C
3.80
4.00
L
1.35
1.75
D
0°
8°
J
0.375 REF.
E
0.40
0.90
K
45°
F
0.19
0.25
G
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±25
V
Continuous Drain Current3, VGS@10V
ID @TA=25 :
7.6
A
Continuous Drain Current3, VGS@10V
ID @TA=70 :
6.1
A
Pulsed Drain Current1
IDM
30
A
Total Power Dissipation
PD @TA=25 :
2
W
Linear Derating Factor
0.016
W/ :
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-ambient3
Max.
Rthj-amb
62.5
: /W
BVDSS
60V
RDS(ON)
21m
ID
7.6A
Pb Free Plating Product
相关PDF资料 |
PDF描述 |
|---|---|
| GSS9980 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSX-200 | SM Watch Crystal |
| GSX-218 | SM Watch Crystal |
| GSX-218/D | SM Watch Crystal |
| GSX-323111NF | SM crystal for Bluetooth / wireless |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GSS9980 | 制造商:GTM 制造商全称:GTM 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| GSSA 200 | 制造商:Hirschmann 功能描述:Bulk |
| GSSA 200 + GSSA 300-5 | 制造商:Belden Inc 功能描述:GSSA 200 + GSSA 300-5 |
| GSSA 300 | 制造商:Hirschmann 功能描述:Bulk |
| GSSA 300 + GSSA 300-5 GASKET | 制造商:Belden Inc 功能描述:GSSA 300 + GSSA 300-5 GASKET |
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