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参数资料
| 型号： | GT25-40DP-2.2V |
| 元件分类： | 电信和以太网连接器 |
| 英文描述： | 40 CONTACT(S), MALE, STRAIGHT TELECOM AND DATACOM CONNECTOR, SURFACE MOUNT |
| 封装： | ROHS COMPLIANT |
| 文件页数： | 5/7页 |
| 文件大小： | 597K |
| 代理商： | GT25-40DP-2.2V |
GT
5
GT
13
GT
16
PO5G
GT
11
GT
14
GT
17
GT
19
GT
3
GT
6W
GT
7
GT
10
GT
18W
GT
15
GT
8
GT
9
GT
25
Connections
of
the
V
arious
Units
and
Device
Interiors
213
GT25 Series
40 positions, 2 rows
BRecommended PCB Mounting Pattern
Part Number
CL No.
Item
Material
Packaging
GT25-40DP-2.2H
775-0003-9
PPS
Color : Gray
200pcs,per reel
Brass
Tin plating
YES
RoHS
The product information in this catalog is for reference only. Please request the Engineering Drawing for the most current and accurate design information.
All non-RoHS products have been discontinued, or will be discontinued soon. Please check the products status on the Hirose website RoHS search at www.hirose-connectors.com, or contact your Hirose sales representative.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| GT-25-5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SWITCHING POWER SUPPLY, SINGLE OUTPUT: 25 WATTS, ENCLOSED, UNIVERSAL INPUT |
| GT25G101 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS |
| GT25G101(Q) | 功能描述:IGBT 晶体管 IGBT 400V 170A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| GT25G101(SM) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 25A I(C) | TO-263VAR |
| GT25G101_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS |
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