型号: | GT30J101 |
元件分类: | 开关 |
英文描述: | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
文件页数: | 5/7页 |
文件大小: | 525K |
代理商: | GT30J101 |
相关PDF资料 |
PDF描述 |
---|---|
GA4F4Z-A | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GS8050BU-E7 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GN1F4ZM66 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GN1L3M-T2 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GP500LSS06S | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相关代理商/技术参数 |
参数描述 |
---|---|
GT30J101(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
GT30J101_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel IGBT High Power Switching Applications |
GT30J121 | 制造商:Toshiba America Electronic Components 功能描述:TRANS IGBT CHIP N-CH 600V 30A 3PIN TO-3P(N) - Rail/Tube |
GT30J121(Q) | 功能描述:IGBT 晶体管 600V/30A DIS RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
GT30J121_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel IGBT High Power Switching Applications |