| 型号: | GT40Q321 |
| 元件分类: | 开关 |
| 英文描述: | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件页数: | 1/7页 |
| 文件大小: | 525K |
| 代理商: | GT40Q321 |

相关PDF资料 |
PDF描述 |
|---|---|
| GS8050CU-E7 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| GSRU15030 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| GN1A4M-T1 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| GT25G102 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| GS8550TB/E6 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相关代理商/技术参数 |
参数描述 |
|---|---|
| GT40Q321(Q) | 制造商:Toshiba 功能描述:Trans IGBT Chip N-CH 1.2KV 42A 3-Pin(3+Tab) TO-3PN |
| GT40Q321_06 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel IEGT Voltage Resonance Inverter Switching Application |
| GT40Q322 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Voltage Resonance Inverter Switching Application |
| GT40Q323 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon N Channel IGBT Voltage Resonance Inverter Switching Application |
| GT40Q323(Q) | 功能描述:IGBT 晶体管 IGBT 1200V 39A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |