型号: | GT60M105 |
元件分类: | 开关 |
英文描述: | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
文件页数: | 1/7页 |
文件大小: | 525K |
代理商: | GT60M105 |
相关PDF资料 |
PDF描述 |
---|---|
GS8550T | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GA1A4Z-T2L68 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GT20G102(SM) | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GES6014TRB | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
GT25G101 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相关代理商/技术参数 |
参数描述 |
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GT60M301 | 制造商:Toshiba America Electronic Components 功能描述:Trans IGBT Chip N-CH 900V 60A 3-Pin(3+Tab) TO-3PL 制造商:Toshiba 功能描述:900V 60A Cut Tape |
GT60M302 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS) |
GT60M303 | 制造商:Toshiba America Electronic Components 功能描述:TRANS IGBT CHIP N-CH 900V 60A 3PIN TO-3P(LH) - Rail/Tube |
GT60M303(Q) | 功能描述:IGBT 晶体管 900V/60A DIS+FRD Trench RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
GT60M303-Q | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:HIGH POWER SWITCHING APPLICATIONS |