参数资料
型号: GTC9926E
厂商: GTM CORPORATION
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N沟道增强型功率MOSFET
文件页数: 2/4页
文件大小: 374K
代理商: GTC9926E
GTC9926E
Page: 2/4
ISSUED DATE :2005/01/07
REVISED DATE :2006/12/25B
Electrical Characteristics (Tj = 25
unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
V
VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
0.1
-
V/ :
Reference to 25 , I
:
D=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
V
VDS=VGS, ID=250uA
Forward Transconductance
gfs
-
9.7
-
S
VDS=10V, ID=4.6A
Gate-Source Leakage Current
IGSS
-
±10
uA
VGS= ±10V
Drain-Source Leakage Current(Tj=25 )
:
-
1
uA
VDS=20V, VGS=0
Drain-Source Leakage Current(Tj=70 )
:
IDSS
-
25
uA
VDS=20V, VGS=0
-
28
VGS=4.5V, ID=4A
Static Drain-Source On-Resistance
RDS(ON)
-
40
m
VGS=2.5V, ID=2A
Total Gate Charge2
Qg
-
12.5
-
Gate-Source Charge
Qgs
-
1
-
Gate-Drain (“Miller”) Change
Qgd
-
6.5
-
nC
ID=4.6A
VDS=20V
VGS=5V
Turn-on Delay Time2
Td(on)
-
820
-
Rise Time
Tr
-
934
-
Turn-off Delay Time
Td(off)
-
860
-
Fall Time
Tf
-
510
-
ns
VDS=10V
ID=1A
VGS=4.5V
RG=6
RD=10
Input Capacitance
Ciss
-
231
-
Output Capacitance
Coss
-
164
-
Reverse Transfer Capacitance
Crss
-
137
-
pF
VGS=0V
VDS=10V
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
1.2
V
IS=1.25, VGS=0V, Tj=25 :
Continuous Source Current(Body Diode)
IS
-
1.25
A
VD= VG=0V, VS=1.2V
Continuous Source Current(Body Diode)
1
ISM
-
20
A
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t 10sec.
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