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参数资料
| 型号： | GU15P10 |
| 厂商： | GTM CORPORATION |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P沟道增强型功率MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 283K |
| 代理商： | GU15P10 |
GU15P10
Page: 2/4
ISSUED DATE :2006/01/19
REVISED DATE :
Electrical Characteristics (Tj = 25 :::: unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
-100
-
V
VGS=0, ID=-1mA
Breakdown Voltage Temperature Coefficient
BVDSS /
Tj
-
-0.1
-
V/ :
Reference to 25 : , ID=-1mA
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
Forward Transconductance
gfs
-
8
-
S
VDS=-10V, ID=-9A
Gate-Source Leakage Current
IGSS
-
±100
nA
VGS= ±20V
Drain-Source Leakage Current(Tj=25 : )
-
-25
uA
VDS=-100V, VGS=0
Drain-Source Leakage Current(Tj=150 : )
IDSS
-
-100
uA
VDS=-80V, VGS=0
Static Drain-Source On-Resistance2
RDS(ON)
-
210
m
VGS=-10V, ID=-9A
Total Gate Charge2
Qg
-
37
60
Gate-Source Charge
Qgs
-
5
-
Gate-Drain (“Miller”) Change
Qgd
-
15
-
nC
ID=-9A
VDS=-80V
VGS=-10V
Turn-on Delay Time2
Td(on)
-
11
-
Rise Time
Tr
-
25
-
Turn-off Delay Time
Td(off)
-
56
-
Fall Time
Tf
-
36
-
ns
VDS=-50V
ID=-9A
VGS=-10V
RG=10
RD=5.6
Input Capacitance
Ciss
-
1180
1900
Output Capacitance
Coss
-
250
-
Reverse Transfer Capacitance
Crss
-
75
-
pF
VGS=0V
VDS=-25V
f=1.0MHz
Gate Resistance
Rg
-
3.6
5
f=1.0MHz
Source-Drain Diode
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Forward On Voltage2
VSD
-
-1.3
V
IS=-9A, VGS=0V
Reverse Recovery Time2
Trr
-
95
-
ns
Reverse Recovery Charge
Qrr
-
410
-
nC
IS=-9A, VGS=0V
dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
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