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参数资料
| 型号： | GU75N07 |
| 厂商： | GTM CORPORATION |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N沟道增强型功率MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 334K |
| 代理商： | GU75N07 |
GU75N07
Page: 1/4
ISSUED DATE :2006/06/06
REVISED DATE :
G
G U
U 7755N
N 0077
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GU75N07 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching Characteristics
*RoHS Compliant
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.40
4.80
c2
1.25
1.45
b
0.76
1.00
b2
1.17
1.47
L4
0.00
0.30 B D
8.6
9.0
c
0.36
0.5
e
2.54 REF.
L3
1.50 REF.
L
14.6
15.8
L1
2.29
2.79
0
8
E
9.80
10.4
L2
1.27 REF.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
75
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@10V
ID @TC=25 :
80
A
Continuous Drain Current, VGS@10V
ID @TC=100 :
56
A
Pulsed Drain Current1
IDM
300
A
Total Power Dissipation
PD @TC=25 :
156
W
Linear Derating Factor
0.125
W/ :
Single Pulse Avalanche Energy3
EAS
450
mJ
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
:
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance Junction-case
Max.
Rthj-case
0.8
: /W
Thermal Resistance Junction-ambient
Max.
Rthj-amb
62
/
: W
BVDSS
75V
RDS(ON)
11m
ID
80A
Pb Free Plating Product
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