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参数资料
| 型号： | GWM160-0055X1-SMD SAM |
| 厂商： | IXYS |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | IC FULL BRIDGE 3PH ISOPLUS SMD |
| 标准包装： | 1 |
| FET 型： | 6 N-沟道（3 相桥） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 150A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.3 毫欧 @ 100A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 105nC @ 10V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 18-SMD，非标准型 |
| 供应商设备封装： | SMD |
| 包装： | 管件 |
GWM 160-0055X1
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
L+
V DSS = 55 V
I D25 = 150 A
R DSon typ. = 2.7 m W
G1
G3
G5
S1
S3
S5
L1
L2
G2
G4
G6
L3
Straight leads
Surface Mount Device
MOSFETs
S2
S4
S6
L-
Applications
Symbol
V DSS
V GS
I D25
I D90
Conditions
T J = 25°C to 150°C
T C = 25°C
T C = 90°C
Maximum Ratings
55 V
± 20 V
150 A
115 A
AC drives
? in automobiles
- electric power steering
- starter generator
? in industrial vehicles
- propulsion drives
- fork lift drives
I F25
I F90
T C = 25°C (diode)
T C = 90°C (diode)
120
75
A
A
? in battery supplied equipment
Features
Symbol
Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
? MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
? package:
R DSon
V GS(th)
I DSS
I GSS
1)
on chip level at
V GS = 10 V; I D = 100 A
V DS = 20 V; I D = 1 mA
V DS = V DSS ; V GS = 0 V
V GS = ± 20 V; V DS = 0 V
T J = 25°C
T J = 125°C
T J = 25°C
T J = 125°C
2.5
2.7
4.5
0.1
3.3
4.5
1
0.2
m W
m W
V
μA
mA
μA
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
? Space and weight savings
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
E on
E off
E recoff
V GS = 10 V; V DS = 12 V; I D = 160 A
inductive load
V GS = 10 V; V DS = 24 V
I D = 100 A; R G = 39 ? ;
T J = 125°C
105
tbd
tbd
140
125
550
120
0.17
0.60
0.004
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
Package options
? 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
R thJC
R thJH
with heat transfer paste (IXYS test setup)
1.3
1.0
1.6
K/W
K/W
1)
V DS = I D · (R DS(on) + 2R Pin to Chip )
Recommended replacements: MTI 120W55GA / MTI 120W55GC
IXYS reserves the right to change limits, test conditions and dimensions.
? 2011 IXYS All rights reserved
20110307i
1-6
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相关代理商/技术参数 |
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| GWM180-004X2 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Three phase full Bridge with Trench MOSFETs in DCB isolated high current package |
| GWM180-004X2-SL | 功能描述:MOSFET 3 Phase Full Bridge RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| GWM180-004X2-SLSAM | 功能描述:MOSFET Trench Gate MOSFET Modules RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| GWM180-004X2-SMD | 功能描述:MOSFET 3 Phase Full Bridge RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| GWM180-004X2-SMDSAM | 功能描述:MOSFET 3 Phase Full Bridge RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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