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参数资料
| 型号： | H11A1SR2M |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER TRANS-OUT 6-SMD |
| 标准包装： | 1,000 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 7500Vpk |
| 电流传输比（最小值）： | 50% @ 10mA |
| 输出电压： | 30V |
| 电流 - DC 正向(If)： | 60mA |
| Vce饱和（最大）： | 400mV |
| 输出类型： | 有基极的晶体管 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-SMD |
| 包装： | 带卷 (TR) |
Absolute Maximum Ratings (T A = 25°C unless otherwise speci?ed)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TOTAL DEVICE
T STG
T OPR
T SOL
P D
Storage Temperature
Operating Temperature
Wave solder temperature (see page 8 for re?ow solder pro?le)
Total Device Power Dissipation @ T A = 25°C
Derate above 25°C
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
°C
°C
°C
mW
EMITTER
I F
V R
I F (pk)
P D
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current – Peak (300μs, 2% Duty Cycle)
LED Power Dissipation @ T A = 25°C
Derate above 25°C
60
6
3
120
1.41
mA
V
A
mW
mW/°C
DETECTOR
V CEO
V CBO
V ECO
P D
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ T A = 25°C
Derate above 25°C
30
70
7
150
1.76
V
V
V
mW
mW/°C
Electrical Characteristics (T A = 25°C unless otherwise speci?ed)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
EMITTER
V F
I R
Input Forward Voltage
Reverse Leakage Current
I F = 10mA
V R = 6.0V
1.18
0.001
1.50
10
V
μA
DETECTOR
BV CEO
BV CBO
BV ECO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
I C = 1.0mA, I F = 0
I C = 100μA, I F = 0
I E = 100μA, I F = 0
30
70
7
100
120
10
V
V
V
I CEO
Collector-Emitter Dark Current
V CE = 10V, I F = 0
1
50
nA
I CBO
C CE
Collector-Base Dark Current
Capacitance
V CB = 10V
V CE = 0V, f = 1 MHz
8
20
nA
pF
Isolation Characteristics
Symbol
V ISO
R ISO
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Test Conditions
f = 60Hz, t = 1 sec
V I-O = 500 VDC
Min.
7500
10 11
Typ.* Max.
Units
Vac(pk)
?
C ISO
Isolation Capacitance
V I-O = &, f = 1MHz
0.2
2
pF
*Typical values at T A = 25°C
?2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
2
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| H11A1SR2-M | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
| H11A1SR2V | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
| H11A1SR2VM | 功能描述:晶体管输出光电耦合器 Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| H11A1SR2V-M | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
| H11A1S-TA1 | 功能描述:OPTOISOLATOR W/BASE SMD RoHS:是 类别:隔离器 >> 光隔离器 - 晶体管，光电输出 系列:- 标准包装:1,500 系列:NEPOC 通道数:1 输入类型:DC 电压 - 隔离:2500Vrms 电流传输比（最小值）:20% @ 16mA 电流传输比（最大）:- 输出电压:7V 电流 - 输出 / 通道:8mA 电流 - DC 正向(If):25mA Vce饱和（最大）:- 输出类型:有 Vcc 的晶体管 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 包装:带卷 (TR) |
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