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参数资料
| 型号： | H11A4SM |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER TRANS-OUT 6-SMD |
| 标准包装： | 1,000 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 7500Vpk |
| 电流传输比（最小值）： | 10% @ 10mA |
| 输出电压： | 30V |
| 电流 - DC 正向(If)： | 60mA |
| Vce饱和（最大）： | 400mV |
| 输出类型： | 有基极的晶体管 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-SMD |
| 包装： | 管件 |
Absolute Maximum Ratings (T A = 25°C unless otherwise speci?ed)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TOTAL DEVICE
T STG
T OPR
T SOL
P D
Storage Temperature
Operating Temperature
Wave solder temperature (see page 8 for re?ow solder pro?le)
Total Device Power Dissipation @ T A = 25°C
Derate above 25°C
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
°C
°C
°C
mW
EMITTER
I F
V R
I F (pk)
P D
DC/Average Forward Input Current
Reverse Input Voltage
Forward Current – Peak (300μs, 2% Duty Cycle)
LED Power Dissipation @ T A = 25°C
Derate above 25°C
60
6
3
120
1.41
mA
V
A
mW
mW/°C
DETECTOR
V CEO
V CBO
V ECO
P D
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ T A = 25°C
Derate above 25°C
30
70
7
150
1.76
V
V
V
mW
mW/°C
Electrical Characteristics (T A = 25°C unless otherwise speci?ed)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
EMITTER
V F
I R
Input Forward Voltage
Reverse Leakage Current
I F = 10mA
V R = 6.0V
1.18
0.001
1.50
10
V
μA
DETECTOR
BV CEO
BV CBO
BV ECO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
I C = 1.0mA, I F = 0
I C = 100μA, I F = 0
I E = 100μA, I F = 0
30
70
7
100
120
10
V
V
V
I CEO
Collector-Emitter Dark Current
V CE = 10V, I F = 0
1
50
nA
I CBO
C CE
Collector-Base Dark Current
Capacitance
V CB = 10V
V CE = 0V, f = 1 MHz
8
20
nA
pF
Isolation Characteristics
Symbol
V ISO
R ISO
Characteristic
Input-Output Isolation Voltage
Isolation Resistance
Test Conditions
f = 60Hz, t = 1 sec
V I-O = 500 VDC
Min.
7500
10 11
Typ.* Max.
Units
Vac(pk)
?
C ISO
Isolation Capacitance
V I-O = &, f = 1MHz
0.2
2
pF
*Typical values at T A = 25°C
?2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
2
www.fairchildsemi.com
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