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参数资料
| 型号： | H11AV2A-M |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 光电耦合器 |
| 英文描述： | PHOTOTRANSISTOR OPTOCOUPLERS |
| 中文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | DIP-6 |
| 文件页数： | 4/10页 |
| 文件大小： | 271K |
| 代理商： | H11AV2A-M |
2005 Fairchild Semiconductor Corporation
www.fairchildsemi.com
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
3
H11A
V1M,
H11A
V1AM,
H11A
V2M,
H11A
V2AM
—
Phototransistor
Optocoupler
s
Electrical Characteristics (T
A = 25°C unless otherwise specied.)
Individual Component Characteristics
Transfer Characteristics
Isolation Characteristics
*Typical values at TA = 25°C
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
EMITTER
VF
Input Forward Voltage (IF = 10mA)
TA = 25°C
0.8
1.18
1.5
V
TA = -55°C
0.9
1.28
1.7
TA = 100°C
0.7
1.05
1.4
IR
Reverse Leakage Current
VR = 6.0V
10
A
DETECTOR
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1.0mA, IF = 0
70
100
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100A, IF = 0
70
120
V
BVECO
Emitter-Collector Breakdown Voltage
IE = 100A, IF = 0
7
10
V
ICEO
Collector-Emitter Dark Current
VCE = 10V, IF = 0
1
50
nA
ICBO
Collector-Base Dark Current
VCB = 10V
0.5
nA
CCE
Capacitance
VCE = 0V, f = 1MHz
8
pF
Symbol
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
Unit
DC CHARACTERISTIC
CTR
Current Transfer Ratio,
Collector to Emitter
IF = 10mA, VCE = 10V
H11AV1M
H11AV1AM
100
300
%
H11AV2M
H11AV2AM
50
VCE (SAT) Collector-Emitter
Saturation Voltage
IC = 2mA, IF = 20mA
All
0.4
V
AC CHARACTERISTIC
TON
Non-Saturated Turn-on
Time
IC = 2mA, VCC = 10V,
RL = 100 (Fig. 11)
All
15
s
TON
Non Saturated Turn-off
Time
IC = 2mA, VCC = 10V,
RL = 100 (Fig. 11)
All
15
s
Symbol
Parameters
Test Conditions
Min.
Typ.*
Max.
Units
VISO
Input-Output Isolation Voltage
f = 60Hz, t = 1 sec.
7500
VAC(pk)
CISO
Isolation Capacitance
VI-O = 0V, f = 1MHz
0.2
2
pF
RISO
Isolation Resistance
VI-O = 500 VDC
1011
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相关代理商/技术参数 |
参数描述 |
|---|---|
| H11AV2AM_Q | 功能描述:晶体管输出光电耦合器 0.4" Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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| H11AV2AVM | 功能描述:晶体管输出光电耦合器 0.4" Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| H11AV2AVM_NL | 制造商:Fairchild Semiconductor Corporation 功能描述:Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP W Bulk |
| H11AV2FM | 功能描述:晶体管输出光电耦合器 0.4" Optocoupler Phototransistor RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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