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参数资料
| 型号： | H11B1SR2M |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | PHOTOCOUPLER DARL OUT GP 6SMD |
| 产品目录绘图： | Opto 6-SMD Package |
| 标准包装： | 1 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 5300Vrms |
| 电流传输比（最小值）： | 500% @ 1mA |
| 输出电压： | 25V |
| 电流 - DC 正向(If)： | 100mA |
| Vce饱和（最大）： | 1V |
| 输出类型： | 有基极的达林顿晶体管 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-SMD |
| 包装： | 标准包装 |
| 产品目录页面： | 2760 (CN2011-ZH PDF) |
| 其它名称： | H11B1SR2MDKR |
Electrical Characteristics (T A = 25°C Unless otherwise speci?ed.) (Continued)
Isolation Characteristics
Symbol
V ISO
Characteristic
Input-Output Isolation Voltage
(5)
Test Conditions
f = 60Hz, t = 1 sec.
Device
All
Min.
7500
Typ.
Max.
Units
V AC PEAK
VDC
VDC
4N32M*
4N33M*
2500
1500
V
R ISO
Isolation Resistance (5)
V I-O = 500VDC
All
10 11
?
C ISO
Isolation Capacitance
(5)
V I-O = ?, f = 1MHz
All
0.8
pF
* Indicates JEDEC registered data.
Notes:
1. The current transfer ratio(I C /I F ) is the ratio of the detector collector current to the LED input current.
2. Pulse test: pulse width = 300μs, duty cycle ≤ 2.0% .
3. I F adjusted to I C = 2.0mA and I C = 0.7mA rms.
4. The frequency at which I C is 3dB down from the 1kHz value.
5. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classi?cations per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classi?cation
Pollution Degree (DIN VDE 0110/1.89)
I-IV
I-IV
55/100/21
2
CTI
Comparative Tracking Index
175
V PR
Input to Output Test Voltage, Method b,
1594
V peak
V IORM x 1.875 = V PR , 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V IORM x 1.5 = V PR , Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
V peak
V IORM
V IOTM
RIO
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
Insulation Resistance at Ts, V IO = 500V
850
6000
7
7
0.5
10 9
V peak
V peak
mm
mm
mm
?
?2007 Fairchild Semiconductor Corporation
4NXXM, H11B1M, TIL113M Rev. 1.0.3
4
www.fairchildsemi.com
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