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参数资料
| 型号： | H11D3SR2M |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | PHOTOCOUPLER DARL OUT GP 6SMD |
| 产品目录绘图： | Opto 6-SMD Package |
| 标准包装： | 1 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 5300Vrms |
| 电流传输比（最小值）： | 20% @ 2mA |
| 输出电压： | 200V |
| 电流 - 输出 / 通道： | 100mA |
| 电流 - DC 正向(If)： | 80mA |
| Vce饱和（最大）： | 400mV |
| 输出类型： | 有基极的晶体管 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-SMD |
| 包装： | 标准包装 |
| 产品目录页面： | 2760 (CN2011-ZH PDF) |
| 其它名称： | H11D3SR2MDKR |
Electrical Characteristics (T A = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
Characteristic
Test Conditions
Device
Min.
Typ.*
Max.
Unit
EMITTER
V F
? V F
Forward Voltage (2)
Forward Voltage
I F = 10mA
All
All
1.15
-1.8
1.5
V
mV/°C
? T A
Temp. Coef?cient
BV R
Reverse Breakdown
I R = 10μA
All
6
25
V
Voltage
C J
Junction Capacitance
V F = 0V, f = 1MHz
All
50
pF
V F = 1V, f = 1MHz
65
pF
I R
Reverse Leakage
Current (2)
V R = 6V
All
0.05
10
μA
DETECTOR
BV CER
Breakdown Voltage
Collector to Emitter (2)
R BE = 1M ? , I C = 1.0mA, I F = 0
MOC8204M
H11D1M/2M
400
300
V
H11D3M
200
BV CEO
No RBE, I C = 1.0mA
4N38M
80
BV CBO
Collector to Base (2)
I C = 100μA, I F = 0
MOC8204M
400
V
H11D1M/2M
H11D3M
4N38M
300
200
80
BV EBO
Emitter to Base
I E = 100μA, I F = 0
4N38M
7
V
BV ECO
I CER
Emitter to Collector
Leakage Current
Collector to Emitter (2)
(R BE = 1M ? )
I E = 100μA, I F = 0
V CE = 300V, I F = 0, T A = 25°C
V CE = 300V, I F = 0, T A = 100°C
V CE = 200V, I F = 0, T A = 25°C
All
MOC8204M
H11D1M/2M
7
10
100
250
100
V
nA
μA
nA
V CE = 200V, I F = 0, T A = 100°C
250
μA
V CE = 100V, I F = 0, T A = 25°C
V CE = 100V, I F = 0, T A = 100°C
H11D3M
100
250
nA
μA
I CEO
No R BE , V CE = 60V, I F = 0,
4N38M
50
nA
T A = 25°C
Transfer Characteristics (T A = 25°C Unless otherwise speci?ed.)
Symbol
Characteristics
Test Conditions
Device
Min.
Typ.*
Max.
Units
EMITTER
CTR
Current Transfer
Ratio, Collector to
Emitter
I F = 10mA, V CE = 10V,
R BE = 1M ?
I F = 10mA, V CE = 10V
H11D1M/2M/3M,
MOC8204M
4N38M
2 (20)
2 (20)
mA (%)
V CE(SAT)
Saturation Voltage (2)
I F = 10mA, I C = 0.5mA,
R BE = 1M ?
H11D1M/2M/3M,
MOC8204M
0.1
0.40
V
SWITCHING TIMES
I F = 20mA, I C = 4mA
4N38M
1.0
t ON
t OFF
Non-Saturated
Turn-on Time
Turn-off Time
V CE = 10V, I CE = 2mA,
R L = 100 ?
All
All
5
5
μs
μs
*All Typical values at T A = 25°C
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
?2007 Fairchild Semiconductor Corporation
4N38M, H11D1 M, H11D2M, H11D3M, MOC8204M Rev. 1.0.6
3
www.fairchildsemi.com
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相关代理商/技术参数 |
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| H11D3SR2VM | 制造商:Fairchild Semiconductor Corporation 功能描述:6-PIN DIP, HV TRANS OUTPUT, VDE, SURFACE MOUNT, T&R - Tape and Reel |
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| H11D3VM | 制造商:Fairchild Semiconductor Corporation 功能描述:6-PIN DIP, HV TRANS OUTPUT, VDE - Bulk |
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