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参数资料
| 型号： | H11F1 |
| 厂商： | ISOCOM COMPONENTS LTD |
| 元件分类： | 光电耦合器 |
| 英文描述： | Photon Coupled Bilateral Analog FET(输出击穿电压±30V的光隔离器（由红外发光二极管+双向对称光检测器组成）) |
| 中文描述： | 1 CHANNEL FET OUTPUT OPTOCOUPLER |
| 封装： | PLASTIC, DIP-6 |
| 文件页数： | 1/3页 |
| 文件大小： | 62K |
| 代理商： | H11F1 |
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB91018AAS/A3
APPROVALS
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UL recognised, File No. E91231
DESCRIPTION
The H11F_ series are optically coupled isolators
consisting of infrared light emitting diode and a
symmetrical bilateral silicon photodetector. The
detector is electrically isolated from the input and
performs like an ideal isolated FET designed for
distortion-free control of low level ac and dc
analog signals.The H11F_ series are mounted in a
standard 6pin dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
As a remote variable resistor
≤
100
to
≥
300M
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≥
99.9% Linearity
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≤
15 pF Shunt Capacitance
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≥
100G
I/O Isolation Resistance
As an Analog Signal Switch
Extremely low Offset Voltage
60V pk-pk Signal Capability
No Charge Injection or Latchup
ton, toff
≤
15
μ
s
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APPLICATIONS
As a remote variable resistor
Isolated variable attenuator
Automatic gain control
Active filter fine tuning / band switching
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H11F1, H11F2, H11F3
Dimensions in mm
2.54
7.0
6.0
8.9
max.
0.5
min.
3.9
3.1
5.1
max.
15°
Max
0.25
0.48
8.3 max.
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6
1.4
0.9
1
3
4
6
2
5
APPLICATIONS (cont.)
As an Analog Signal Switch
Isolated sample and hold circuit
Multiplexed, optically isolated A/D conversion
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ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
Operating Temperature
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
-55°C to + 150°C
-55°C to + 100°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
100mW
OUTPUT TRANSISTOR
Breakdown Voltage
H11F1, H11F2
H11F3
Detector Current (continuous)
Power Dissipation
±30V
±15V
±100mA
300mW
POWER DISSIPATION
Total Power Dissipation
350mW
PHOTON COUPLED BILATERAL
ANALOG FET
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
相关PDF资料 |
PDF描述 |
|---|---|
| H11F2 | Photon Coupled Bilateral Analog FET(输出击穿电压±30V的光隔离器（由红外发光二极管+双向对称光检测器组成）) |
| H11F3 | Photon Coupled Bilateral Analog FET(输出击穿电压±15V的光隔离器（由红外发光二极管+双向对称光检测器组成）) |
| H11G1X | HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR |
| H11G2X | HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR |
| H11G3X | HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| H11F1 | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER FET O/P |
| H11F1_03 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:PHOTO FET OPTOCOUPLERS |
| H11F1_Q | 功能描述:MOSFET输出光电耦合器 DIP-6 ANALOG FET RoHS:否 制造商:Fairchild Semiconductor 每芯片的通道数量:1 Channel 输出设备:Photo MOSFET 绝缘电压:5000 Vrms 正向电流: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装:Reel |
| H11F1300 | 功能描述:MOSFET输出光电耦合器 Optocoupler FET Bilateral analog RoHS:否 制造商:Fairchild Semiconductor 每芯片的通道数量:1 Channel 输出设备:Photo MOSFET 绝缘电压:5000 Vrms 正向电流: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装:Reel |
| H11F1300W | 功能描述:MOSFET输出光电耦合器 Optocoupler FET Bilateral analog RoHS:否 制造商:Fairchild Semiconductor 每芯片的通道数量:1 Channel 输出设备:Photo MOSFET 绝缘电压:5000 Vrms 正向电流: 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装:Reel |
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