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参数资料
| 型号： | H11F2M |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 3/11页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER PHOTO FET 6DIP |
| 产品目录绘图： | Opto 6-DIP Package |
| 标准包装： | 1,000 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 5300Vrms |
| 输出电压： | 30V |
| 电流 - DC 正向(If)： | 60mA |
| 输出类型： | 光电 FET |
| 安装类型： | 通孔 |
| 封装/外壳： | 6-DIP（0.300"，7.62mm） |
| 包装： | 管件 |
| 产品目录页面： | 2759 (CN2011-ZH PDF) |
Electrical Characteristics (T A = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
Unit
EMITTER
V F
Input Forward Voltage
I F = 16mA
All
1.3
1.75
V
I R
C J
Reverse Leakage Current
Capacitance
V R = 5V
V = 0 V, f = 1.0MHz
All
All
50
10
μA
pF
OUTPUT DETECTOR
BV 4-6
Breakdown Voltage
I 4-6 = 10μA, I F = 0
H11F1M, H11F2M
30
V
Either Polarity
H11F3M
15
I 4-6
Off-State Dark Current
V 4-6 = 15 V, I F = 0
V 4-6 = 15 V, I F = 0,
All
All
50
50
nA
μA
T A = 100°C
R 4-6
C 4-6
Off-State Resistance
Capacitance
V 4-6 = 15 V, I F = 0
V 4-6 = 15 V, I F = 0,
All
All
300
15
M Ω
pF
f = 1MHz
Transfer Characteristics
Symbol
Characteristics
Test Conditions
Device
Min
Typ*
Max
Units
DC CHARACTERISTICS
R 4-6
On-State Resistance
I F = 16mA,
H11F1M
200
Ω
I 4-6 = 100μA
H11F2M
H11F3M
330
470
R 6-4
On-State Resistance
I F = 16mA,
H11F1M
200
Ω
I 6-4 = 100μA
H11F2M
H11F3M
330
470
Resistance, non-linearity
I F = 16mA,
All
2
%
and assymetry
I 4-6 = 25μA RMS,
f = 1kHz
AC CHARACTERISTICS
t on
Turn-On Time
R L = 50 Ω , I F = 16mA,
All
45
μs
V 4-6 = 5V
t off
Turn-Off Time
R L = 50 Ω , I F = 16mA,
All
45
μs
V 4-6 = 5V
Isolation Characteristics
Symbol
Characteristic
Test Conditions
Device
Min.
Typ.*
Max.
Units
V ISO
R ISO
C ISO
Isolation Voltage
Isolation Resistance
Isolation Capacitance
f = 60Hz, t = 1 sec.
V I-O = 500 VDC
f = 1MHz
All
All
All
7500
10 11
0.2
V AC PEAK
Ω
pF
*All Typical values at T A = 25°C
?2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
3
www.fairchildsemi.com
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