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参数资料
| 型号： | H11F3SVM |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER PHOTO FET 6SMD |
| 产品目录绘图： | Opto 6-SMD Package |
| 标准包装： | 1,000 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 5300Vrms |
| 输出电压： | 15V |
| 电流 - DC 正向(If)： | 60mA |
| 输出类型： | 光电 FET |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-SMD |
| 包装： | 管件 |
| 产品目录页面： | 2760 (CN2011-ZH PDF) |
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classi?cations per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
For Rated Main voltage < 300Vrms
Climatic Classi?cation
Pollution Degree (DIN VDE 0110/1.89)
I-IV
I-IV
55/100/21
2
CTI
Comparative Tracking Index
175
V PR
Input to Output Test Voltage, Method b, V IORM x 1.875
1594
V peak
= V PR , 100% Production Test with tm = 1 sec, Partial
Discharge < 5pC
Input to Output Test Voltage, Method a, V IORM x 1.5 =
V PR , Type and Sample Test with tm = 60 sec, Partial
Discharge < 5pC
1275
V peak
V IORM
V IOTM
RIO
Max. Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
Insulation Thickness
Insulation Resistance at Ts, V IO = 500V
850
6000
7
7
0.5
10 9
V peak
V peak
mm
mm
mm
Ω
?2007 Fairchild Semiconductor Corporation
H11F1M, H11F2M, H11F3M Rev. 1.0.5
4
www.fairchildsemi.com
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