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参数资料
| 型号： | H11G1TVM |
| 厂商： | Fairchild Optoelectronics Group |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | OPTOCOUPLER PHOTODARL HV 6DIP |
| 产品目录绘图： | Opto 6-DIP Package |
| 标准包装： | 1,000 |
| 通道数： | 1 |
| 输入类型： | DC |
| 电压 - 隔离： | 5300Vrms |
| 电流传输比（最小值）： | 500% @ 1mA |
| 输出电压： | 100V |
| 电流 - DC 正向(If)： | 60mA |
| Vce饱和（最大）： | 1V |
| 输出类型： | 有基极的达林顿晶体管 |
| 安装类型： | 通孔 |
| 封装/外壳： | 6-DIP（0.300"，7.62mm） |
| 包装： | 管件 |
Electrical Characteristics (T A = 25°C unless otherwise specified.)
Individual Component Characteristics
Symbol
Characteristic
Test Conditions
Device
Min.
Typ.*
Max.
Unit
EMITTER
V F
? V F
Forward Voltage
Forward Voltage
I F = 10mA
All
All
1.3
-1.8
1.50
V
mV/°C
? T A
Temp. Coef?cient
BV R
Reverse Breakdown
I R = 10μA
All
3.0
25
V
Voltage
C J
Junction Capacitance
V F = 0V, f = 1MHz
All
50
pF
V F = 1V, f = 1MHz
65
I R
Reverse Leakage
V R = 3.0V
All
0.001
10
μA
Current
DETECTOR
BV CEO
Breakdown Voltage
I C = 1.0mA, I F = 0
H11G1M
100
V
Collector to Emitter
H11G2M
H11G3M
80
55
BV CBO
Collector to Base
I C = 100μA
H11G1M
100
V
H11G2M
H11G3M
80
55
BV EBO
Emitter to Base
All
7
10
V
I CEO
Leakage Current
V CE = 80V, I F = 0
H11G1M
100
nA
Collector to Emitter
V CE = 60V, I F = 0
V CE = 30V, I F = 0
H11G2M
H11G3M
V CE = 80V, I F = 0, T A = 80°C
V CE = 60V, I F = 0, T A = 80°C
H11G1M
H11G2M
100
μA
Transfer Characteristics
Symbol
Characteristics
Test Conditions
Device
Min.
Typ.*
Max.
Units
EMITTER
CTR
Current Transfer
Ratio, Collector to
Emitter
I F = 10mA, V CE = 1V
I F = 1mA, V CE = 5V
H11G1M/2M
H11G1M/2M
H11G3M
100 (1000)
5 (500)
2 (200)
mA (%)
V CE(SAT)
Saturation Voltage
I F = 16mA, I C = 50mA
H11G1M/2M
0.85
1.0
V
I F = 1mA, I C = 1mA
I F = 20mA, I C = 50mA
H11G1M/2M
H11G3M
0.75
0.85
1.0
1.2
SWITCHING TIMES
t ON
t OFF
Turn-on Time
Turn-off Time
R L = 100 ? , I F = 10mA,
V CE = 5V, f ≤ 30Hz,
Pulse Width ≤ 300μs
All
All
5
100
μs
μs
Isolation Characteristics
Symbol
Characteristic
Test Conditions
Device
Min.
Typ.*
Max.
Units
V ISO
R ISO
C ISO
Isolation Voltage
Isolation Resistance
Isolation Capacitance
f = 60Hz, t = 1 sec.
V I-O = 500 VDC
f = 1MHz
All
All
All
7500
10 11
0.2
V AC PEAK
?
pF
*All Typical values at T A = 25°C
?2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
3
www.fairchildsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| H11G1VM | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| H11G1W | 功能描述:晶体管输出光电耦合器 Hi Volt Optocoupler Photodarlington RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| H11G1X | 制造商:ISOCOM 制造商全称:ISOCOM 功能描述:HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR |
| H11G2 | 功能描述:晶体管输出光电耦合器 DIP-6 HV PHOTO DARL RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| H11G2 | 制造商:Fairchild Semiconductor Corporation 功能描述:OPTOCOUPLER DARLINGTON O/P |
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