参数资料
型号: H11N2SVM
厂商: Fairchild Optoelectronics Group
文件页数: 3/10页
文件大小: 0K
描述: OPTOISOLATOR SCHMITT OUT 6-SMD
标准包装: 1,000
电压 - 隔离: 7500Vrms
通道数: 1,单向
电流 - 输出 / 通道: 50mA
数据速率: 5MHz
传输延迟高 - 低 @ 如果: 100ns
电流 - DC 正向(If): 5mA
输入类型: DC
输出类型: 开路集电极
安装类型: 表面贴装
封装/外壳: 6-SMD
供应商设备封装: 6-SMD
包装: 管件
Electrical Characteristics (T A = 25°C unless otherwise speci?ed.)
Individual Component Characteristics
Symbol
Parameters
Test Conditions
Device
Min.
Typ.*
Max.
Units
EMITTER
V F
Input Forward Voltage
I F = 10mA
All
1.4
2
V
I F = 0.3mA
0.75
1.25
I R
C J
Reverse Current
Capacitance
V R = 5V
V = 0, f = 1.0MHz
All
All
10
100
μA
pF
DETECTOR
V CC
Operating Voltage Range
All
4
15
V
I CC(off)
I OH
Supply Current
Output Current, High
I F = 0, V CC = 5V
I F = 0.3mA, V CC = V O = 15V
All
All
6
10
100
mA
μA
Transfer Characteristics
Symbol
I CC(on)
V OL
DC Characteristics
Supply Current
Output Voltage, Low
Test Conditions
I F = 10mA, V CC = 5V
R L =270 ? ,V CC =5V,
Device
All
All
Min.
Typ.*
6.5
Max.
10
0.5
Units
mA
V
I F = I F(on) max.
I F(on)
Turn-On Threshold Current R L =270 ? , V CC = 5V (1)
H11N1M
0.8
3.2
mA
H11N2M
H11N3M
2.3
4.1
5
10
I F(off)
Turn-Off Threshold Current R L = 270 ? , V CC = 5V
All
0.3
mA
I F(off) / I F(on) Hysteresis Ratio
R L = 270 ? , V CC = 5V
All
0.65
0.95
Switching Speed
Symbol
t PHL
t r
t PLH
t f
AC Characteristics
Propagation Delay Time
HIGH-to-LOW
Rise Time
Propagation Delay Time
LOW-to-HIGH
Fall Time
Test Conditions
C = 120pF, t P = 1μs,
R E = (2) , Figure 1
C = 120pF, t P = 1μs,
R E = (2) , Figure 1
C = 120pF, t P = 1μs,
R E = (2) , Figure 1
C = 120pF, t P = 1μs,
R E = (2) , Figure 1
Device
All
All
All
All
Min.
Typ.*
100
7.5
150
12
Max.
330
330
Units
ns
ns
ns
ns
Data Rate
All
5
MHz
Isolation Characteristics
Symbol
Parameters
Test Conditions
Min.
Typ.*
Max.
Units
V ISO
Input-Output Isolation Voltage f = 60 Hz, t =1 sec.
7500
V PEAK
C ISO
R ISO
Isolation Capacitance
Isolation Resistance
V I-O = 0V, f = 1 MHz
V I-O = ±500 VDC
10 11
0.4
0.6
pF
?
*Typical values at T A = 25°C
Notes:
1. Maximum I F(ON) is the maximum current required to trigger the output. For example, a 3.2mA maximum trigger current
would require the LED to be driven at a current greater than 3.2mA to guarantee the device will turn on. A 10% guard band
is recommended to account for degradation of the LED over its lifetime. The maximum allowable LED drive current is 30mA.
2. H11N1: R E = 910 ? , H11N2: R E = 560 ? , H11N3: R E = 240 ?
?2005 Fairchild Semiconductor Corporation
H11N1M, H11N2M, H11N3M Rev. 1.0.2
3
www.fairchildsemi.com
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