参数资料
型号: HA1-5330-5
厂商: Intersil
文件页数: 5/5页
文件大小: 0K
描述: IC AMP SAMPLE&HOLD 650NS 14-DIP
标准包装: 25
放大器类型: 采样和保持
电路数: 1
转换速率: 90 V/µs
增益带宽积: 4.5MHz
电流 - 输入偏压: 20nA
电压 - 输入偏移: 200µV
电流 - 电源: 19mA
电流 - 输出 / 通道: 10mA
电压 - 电源,单路/双路(±): ±10 V ~ 20 V
工作温度: 0°C ~ 75°C
安装类型: 通孔
封装/外壳: 14-CDIP(0.300",7.62mm)
供应商设备封装: 14-CERDIP
包装: 管件
5
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Die Characteristics
DIE DIMENSIONS:
99 mils x 166 mils x 19 mils
2510
m x 4210m x 483m
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16k
±2k
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12k
±2k
Nitride Thickness: 3.5k
±1.5k
SUBSTRATE POTENTIAL (POWERED UP):
Signal GND
TRANSISTOR COUNT:
205
PROCESS:
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5330
+IN
-IN
SIGNAL GND
SUPPLY GND
V+
S/H CONTROL
OUTPUT
V-
OFFSET ADJ
HA-5330
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