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参数资料
| 型号： | HA22032T |
| 元件分类： | 上/下变频器 |
| 英文描述： | RF/MICROWAVE DOWN CONVERTER |
| 封装： | TSSOP-8 |
| 文件页数： | 7/11页 |
| 文件大小： | 43K |
| 代理商： | HA22032T |
HA22032
5
Main Characteristics
29
28
27
26
25
24
23
3
2.5
2
1.5
Conversion gain,Noise figure
vs.Frequency
1400
1600
1550
1500
1450
Frequency f (MHz)
Conversion
gain
CG
(dB)
Noise
figure
NF
(dB)
NF
CG
8
6
4
2
0
3rd order inter-cept point(out)
vs. Frequency
1400
1600
1550
1500
1450
Frequency f (MHz)
3rd
order
inter-cept
point
IP3o
(dBm)
29
28
27
26
25
24
23
Conversion gain,3rd order inter-cept point
vs. Input power
-55
-20
-30
-40
-45
Frequency f (MHz)
Conversion
gain
CG
(dB)
-55
-35
6
5
4
3
2
1
0
3rd
order
inter-cept
point
IP3o
(dBm)
CG
IP3o
2.5
2
1.5
1
VSWR vs. Frequency
1475
1505
1490
1485
Frequency(RF) RF (MHz)
VSWR
1480
1495 1500
RF
Lo
1605
1635
1620
1615
Frequency(Lo) Lo (MHz)
1610
1625 1630
Vdd = 3V
f = 1489MHz
fLo = 1619MHz
PLo = –15dBm
Ta = +25°C
2 signals input
Vdd = 3V
Ta = +25°C
Vdd = 3V
Pin = –30dBm
IF = 130MHz
PLo = –15dBm
Ta = +25°C
2 signals input
Vdd = 3V
Pin = –30dBm
IF = 130MHz
PLo = –15dBm
Ta = +25°C
相关PDF资料 |
PDF描述 |
|---|---|
| HA22032T | RF/MICROWAVE DOWN CONVERTER |
| HA22033 | RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| HA22033 | RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| HA22039 | RF/MICROWAVE DOUBLE BALANCED MIXER |
| HA31006ANPTL-E | RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HA22033 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:GaAs MMIC Low Noise Amplifier for Micro Wave Application |
| HA22039 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:GaAs IC Low Distortion Mixer for Micro Wave Application |
| HA22040 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:GaAs MMIC Down Converter for Micro Wave Application |
| HA22-060-18 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
| HA22-060-48 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
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