参数资料
型号: HA31006ANPTL-E
元件分类: 放大器
英文描述: RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装: 2 X 2 MM, 0.80 MM HEIGHT, LEADLESS, HWQFN-8
文件页数: 7/13页
文件大小: 214K
代理商: HA31006ANPTL-E
REJ03F0174-0300 Rev.3.00 Jul 31, 2007
Page 1 of 10
HA31006ANP
SiGe MMIC
High Frequency Low Noise Amplifier
REJ03F0174-0300
Rev.3.00
Jul 31, 2007
Features
Ideal for 2.4 / 5 GHz Band applications. e.g. 2.4 / 5 GHz Band Wireless LAN
Low Noise (1.3 dB @ 2.4 GHz, 1.7 dB @ 5.2 GHz)
High Gain (20 dB @ 2.4 GHz, 16 dB @ 5.2 GHz)
8 Pin, Lead less, Small mounting area
(HWQFN-8 : 2.0 × 2.0 × 0.8 mm)
Outline
1. Vctrl
2. RFout
3. GND
4. GND
5. GND
6. RFin
7. GND
8. GND
9. GND
RENESAS package code: PWQN0008ZA-A
(Package name: HWQFN-8 <TNP-8TV> )
1
3
7 6
5
2
4
8
9
L006
xxxx
1
3
7
6
5
2
4
8
9
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Supply Voltage
VCC
4
V
Maximum Current
ICC
15
mA
Maximum Input Power
Pin max
+5
dBm
Power Dissipation
Pt
60
Note
mW
Operating temperature
Tcop
–10 to +85
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: Specified condition
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