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参数资料
| 型号： | HAT1020R |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon P-Channel Power MOS FET(P沟道功率MOSFET) |
| 中文描述： | 硅P沟道功率MOS FET性（P沟道功率MOSFET的） |
| 文件页数： | 3/8页 |
| 文件大小： | 118K |
| 代理商： | HAT1020R |
HAT1020R
3
Main Characteristics
4.0
3.0
2.0
1.0
0
C
50
100
150
200
Ambient Temperature Ta (°C)
Power vs. Temperature Derating
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
10 μs 100 μs
–0.1
–100
–10
–1
–0.1
–0.01
–0.3
–1
–3
–10
–30
–100
–30
–3
–0.3
–0.03
Operation in
this area is
limited by R
DS(on)
1ms
PW=10ms
Noe4
Ta = 25 °C
1 shot pulse
–20
–16
–12
–8
–4
0
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
–10 V
–6 V
–5 V
–4.5 V
Pulse Test
V = –2.5 V
–3.5 V
–3 V
–4 V
–2
–4
–6
–8
–10
–20
–16
–12
–8
–4
0
Gate to Source Voltage V (V)
D
D
Typical Transfer Characteristics
–1
–2
–3
–4
–5
Tc = –25 °C
75 °C
25 °C
V = –10 V
Pulse Test
Note 4 :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
DCOpeaion(PW<10s
相关PDF资料 |
PDF描述 |
|---|---|
| HAT1020 | Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1021R | Silicon P Channel Power MOS FET(P沟道功率MOSFET) |
| HAT1021 | Silicon P Channel Power MOS FET High Speed Power Switching |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HAT1020R-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 5A 8-Pin SOP T/R Cut Tape 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 30V 5A 8-Pin SOP T/R Bulk 制造商:Renesas 功能描述:Trans MOSFET P-CH 30V 5A 8-Pin SOP T/R |
| HAT1021 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1021R | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 20V 5.5A 8SOP - Tape and Reel |
| HAT1021R-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 20V 5.5A 8-Pin SOP T/R Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 20V 5.5A 8-Pin SOP T/R |
| HAT1023R | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 20V 7A 8SOP - Tape and Reel |
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