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参数资料
| 型号： | HAT1044M |
| 厂商： | Hitachi,Ltd. |
| 英文描述： | Silicon P Channel Power MOS FET Power Switching |
| 中文描述： | 硅P通道功率MOS场效应管电源开关 |
| 文件页数： | 2/4页 |
| 文件大小： | 27K |
| 代理商： | HAT1044M |
HAT1044M
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
*
2
I
D(pulse)
*
1
I
DR
*
2
Pch
(pulse)
*
2
Pch
(continuous)
*
3
Tch
-30
V
Gate to source voltage
±
20
V
Drain current
-4.5
A
Drain peak current
-18
A
Body-drain diode reverse drain current
-4.5
A
Channel dissipation
2.0
W
1.05
W
Channel temperature
150
°
C
°
C
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. When using the alumina ceramic board (50 x 50 x 0.7 mm), PW
≤
5s,Ta=25
°
C
3. When using the alumina ceramic board (50 x 50 x 0.7 mm) ,Ta=25
°
C
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
-30
—
—
V
I
D
= 10mA, V
GS
= 0
V
GS
=
±
20V, V
DS
= 0
V
DS
= -30 V, V
GS
= 0
V
DS
= -10V,
I
D
= -1mA
I
D
= -3A, V
GS
= -10V *
1
I
D
= -3A, V
GS
= -4.5V
*
1
I
D
= -3A, V
DS
= -10V
*
1
V
DS
= -10V
V
GS
= 0
f = 1MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
0.1
μ
A
μ
A
Zero gate voltege drain current
—
—
-1
Gate to source cutoff voltage
-1.0
—
-2.5
V
Static drain to source on state
—
50
60
m
m
resistance
—
80
105
Forward transfer admittance
3
5.5
—
S
Input capacitance
—
600
—
pF
Output capacitance
Coss
—
220
—
pF
Reverse transfer capacitance
Crss
—
150
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
12
—
ns
V
GS
= -10V, I
D
= -3A
R
L
= 3.3
Rise time
—
85
—
ns
Turn-off delay time
—
55
—
ns
Fall time
—
55
—
ns
Body–drain diode forward voltage
—
-0.95
—
V
IF = -4.5A, V
GS
= 0
*
1
IF = -4.5A, V
GS
= 0
diF/ dt =-20A/
μ
s
Body–drain diode reverse
recovery time
Note:
1. Pulse test
—
50
—
ns
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