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参数资料
| 型号： | HAT1047R |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道功率MOS FET的高速电源开关 |
| 文件页数： | 3/10页 |
| 文件大小： | 112K |
| 代理商： | HAT1047R |
HAT1047R, HAT1047RJ
Rev.5.00, Aug.27.2003, page 3 of 9
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–30
—
—
V
I
D
= –10 mA, V
GS
= 0
I
G
= ±100
μ
A, V
DS
= 0
V
GS
= ± 16V, V
DS
= 0
Gate to source breakdown voltage V
(BR)GSS
±20
—
—
mV
μ
A
μ
A
μ
A
μ
A
V
m
m
S
Gate to source leak current
I
GSS
—
—
±10
Zero gate voltage drain current
I
DSS
—
—
±1
V
DS
= –30 V, V
GS
= 0
Zero gate voltage
HAT1047R
I
DSS
—
—
—
V
DS
= –24 V, V
GS
= 0
drain current
HAT1047RJ
I
DSS
—
—
–20
Ta = 125°C
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.5
V
DS
= –10 V,
I
D
= –1 mA
I
D
= –7 A, V
GS
= –10 V
Note4
I
D
= –7 A, V
GS
= –4.5 V
Note4
I
D
= –7 A, V
DS
= –10 V
Note4
Static drain to source on state
R
DS(on)
—
10
12
resistance
R
DS(on)
—
19
25
Forward transfer admittance
|y
fs
|
9.6
16
—
Input capacitance
Ciss
—
3500
—
pF
V
DS
= –10 V
Output capacitance
Coss
—
750
—
pF
V
GS
= 0
Reverse transfer capacitance
Crss
—
520
—
pF
f = 1 MHz
Total gate charge
Qg
—
64
—
nc
V
DD
= –10 V
Gate to source charge
Qgs
—
10
—
nc
V
GS
= –10 V
Gate to drain charge
Qgd
—
12
—
nc
I
D
= –14 A
Turn-on delay time
t
d(on)
—
23
—
ns
V
GS
= –10 V, I
D
= –7A
V
DD
–10 V
R
L
= 1.43
R
L
= 4.7
IF = –14 A, V
GS
= 0
Note4
Rise time
t
r
—
45
—
ns
Turn-off delay time
t
d(off)
—
80
—
ns
Fall time
t
f
—
25
—
ns
Body–drain diode forward voltage
V
DF
—
–0.82
–1.07
V
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
t
rr
—
45
—
ns
IF = –14 A, V
GS
= 0
diF/ dt = 100 A/
μ
s
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HAT1047RJ | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1047RWS-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:Pch MOSFET,30V,14A,ohm,SOP8 制造商:Renesas 功能描述:0 |
| HAT1048R | 功能描述:MOSFET P-CH 30V 16A 8SOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| HAT1048R-EL-E | 功能描述:MOSFET P-CH 30V 16A 8SOP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| HAT1053M | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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