参数资料
型号: HAT1055R
厂商: Renesas Technology Corp.
英文描述: Silicon P Channel Power MOS FET High Speed Power Switching
中文描述: 硅P通道功率MOS FET的高速电源开关
文件页数: 8/10页
文件大小: 119K
代理商: HAT1055R
HAT1055R, HAT1055RJ
Rev.1.00, Aug.29.2003, page 8 of 9
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1sho puse
D = 1
0.05
0.02
0.01
1sho puse
10
μ
100
μ
1 m
10 m
100 m
Pulse Width PW (S)
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
10
μ
100
μ
1 m
10 m
100 m
Pulse Width PW (S)
1
10
100
1000
10000
10
1
0.1
0.01
0.001
0.0001
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
N
s
γ
N
s
γ
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
DM
P
PW
T
D =T
θ
ch - f(t) =
γ
s (t) x
θ
ch - f
θ
ch - f = 125
°
C/W, Ta = 25
°
C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
DM
P
PW
T
D =T
θ
ch - f(t) =
γ
s (t) x
θ
ch - f
θ
ch - f = 166
°
C/W, Ta = 25
°
C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
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