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参数资料
| 型号： | HAT1055RJ |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel Power MOS FET High Speed Power Switching |
| 中文描述： | 硅P通道功率MOS FET的高速电源开关 |
| 文件页数： | 3/10页 |
| 文件大小： | 119K |
| 代理商： | HAT1055RJ |
HAT1055R, HAT1055RJ
Rev.1.00, Aug.29.2003, page 3 of 9
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
–60
—
—
V
I
D
= –10 mA, V
GS
= 0
Gate to Source breakdown voltage V
(BR)GSS
±
20
—
—
—
V
μ
A
μ
A
μ
A
μ
A
V
I
G
=
±
100
μ
A, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
Zero gate voltage drain current
I
DSS
—
–1
Zero gate voltage
HAT1055R
I
DSS
—
—
—
V
DS
= –48 V, V
GS
= 0
Ta = 125
°
C
V
GS
=
±
16 V, V
DS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –2.5 A
Note5
, V
DS
= –10 V
I
D
= –2.5 A
Note5
, V
GS
= –10 V
I
D
= –2.5 A
Note5
, V
GS
= –4.5 V
drain current
HAT1055RJ I
DSS
—
—
–10
±
10
–2.5
Gate to source leak current
I
GSS
—
—
Gate to source cutoff voltage
V
GS(off)
–1.0
—
Forward transfer admittance
|y
fs
|
3
5
—
S
m
m
pF
Static drain to source on state
R
DS(on)
—
60
76
resistance
R
DS(on)
—
90
130
Input capacitance
Ciss
—
1350
—
V
DS
= –10 V, V
GS
= 0
Output capacitance
Coss
—
135
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
85
—
pF
Total gate charge
Qg
—
21
—
nC
V
DD
= –25 V
Gate to source charge
Qgs
—
3
—
nC
V
GS
= –10 V
Gate to drain charge
Qgd
—
4
—
nC
I
D
= –5 A
Turn-on delay time
td(on)
—
20
—
ns
V
GS
= –10 V, I
D
= –2.5 A
V
DD
–30 V
R
L
= 12
R
G
= 4.7
I
F
= –5 A, V
GS
= 0
Note5
Rise time
tr
—
15
—
ns
Turn-off delay time
td(off)
—
55
—
ns
Fall time
tf
—
10
—
ns
Body-drain diode forward voltage
V
DF
—
–0.85
–1.10
V
Body-drain diode reverse recovery
time
Notes: 5. Pulse test
trr
—
25
—
ns
I
F
= –5 A, V
GS
= 0
diF/dt = 100 A/μs
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相关代理商/技术参数 |
参数描述 |
|---|---|
| HAT1055RJ-EL-E | 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFET, DUAL P-CHAN - Tape and Reel 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
| HAT1059C | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| HAT1065R | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1065R-EL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1065T | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET High Speed Power Switching |
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