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参数资料
| 型号： | HAT1110R-EL-E |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel Power MOS FET Power Switching |
| 中文描述： | 硅P通道功率MOS场效应管电源开关 |
| 文件页数： | 3/8页 |
| 文件大小： | 218K |
| 代理商： | HAT1110R-EL-E |
HAT1110R
Rev.2.00, Oct.07.2007, page 3 of 7
Main Characteristics
10
1
0.1
1
10
100
0
–5
–10
–2.0
–1.0
–2.5
–2.0
–1.5
–1.0
–0.5
0
–3.0
–4.0
–2.0
–1.0
Gate to Source Voltage V
GS
(V)
–5.0
0.01
V
GS
= –3 V
Tc =
25
°
C
75
°
C
25
°
C
C
Ambient Temperature Ta (
°
C)
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
D
D
Typical Output Characteristics
Pulse Test
D
D
Typical Transfer Characteristics
V
DS
= –10 V
Pulse Test
–3.5 V
–4 V
–5 V
–10 V
0.1
0.001
100
μ
s
1ms
PW=10ms(1sho)
Ta = 25
°
C
1 shot Pulse
10
μ
s
DCOperaion(PW
≤
10s)
Operation in
this area is
limited by R
DS(on)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
–5
–3
–4
–2
–1
0
–4
–8
–20
–12
–16
0.1
1
10
1
0
I
D
= –1 A
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
D
D
Drain Current I
D
(A)
S
D
)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
Pulse Test
–0.5 A
V
GS
= –4.5 V
–10 V
4.0
3.0
2.0
1.0
0
50
100
150
200
Power vs. Temperature Derating
2DrveOperaion
1 Drive Operation
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW
≤
10 s)
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