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参数资料
| 型号： | HAT1110R |
| 厂商： | Renesas Technology Corp. |
| 英文描述： | Silicon P Channel Power MOS FET Power Switching |
| 中文描述： | 硅P通道功率MOS场效应管电源开关 |
| 文件页数： | 5/8页 |
| 文件大小： | 218K |
| 代理商： | HAT1110R |
HAT1110R
Rev.2.00, Oct.07.2007, page 5 of 7
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
N
γ
s
10
μ
100
μ
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
D = 1
0.5
0.2
0.1
0.05
0.02
1sho puse
DM
P
PW
T
D =T
θ
ch - f(t) =
γ
s (t) x
θ
ch - f
θ
ch - f = 180
°
C/W, Ta = 25
°
C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
N
γ
s
10
μ
100
μ
1 m
10 m
100 m
1
10
100
1000
10000
10
1
0.1
0.01
0.001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1sho puse
DM
P
PW
T
D =T
θ
ch - f(t) =
γ
s (t) x
θ
ch - f
θ
ch - f = 230
°
C/W, Ta = 25
°
C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
0
–0.4
–0.8
–1.2
–1.6
–2.0
–2.5
–2.0
–1.5
–1.0
–0.5
V
GS
= 0V, 5 V
–5 V
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
R
D
Pulse Test
–10 V
相关PDF资料 |
PDF描述 |
|---|---|
| HAT1110R-EL-E | Silicon P Channel Power MOS FET Power Switching |
| HAT1111C | Silicon P Channel MOS FET Power Switching |
| HAT1111C-EL-E | Silicon P Channel MOS FET Power Switching |
| HAT1126R | Silicon P Channel Power MOS FET High Speed Power Switching |
| HAT1126R-EL-E | Silicon P Channel Power MOS FET High Speed Power Switching |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HAT1110R-EL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel Power MOS FET Power Switching |
| HAT1111C | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon P Channel MOS FET Power Switching |
| HAT1111C-EL-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 2A 6-Pin CMFPAK T/R |
| HAT1126R | 制造商:Renesas Electronics Corporation 功能描述: |
| HAT1126R-EL-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R Cut Tape 制造商:Renesas 功能描述:Trans MOSFET P-CH 60V 6A 8-Pin SOP T/R |
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