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参数资料
| 型号： | HCPL-315J-500 |
| 英文描述： | 0.5 Amp Output Current IGBT Gate Drive Optocoupler |
| 中文描述： | 0.5安培输出电流IGBT栅极驱动光电耦合器 |
| 文件页数： | 19/21页 |
| 文件大小： | 488K |
| 代理商： | HCPL-315J-500 |
19
1
3
2
4
8
6
7
5
C
LEDP
C
LEDN
1
3
2
4
8
6
7
5
C
LEDP
C
LEDN
SHIELD
C
LEDO1
C
LEDO2
Figure 29. Optocoupler Input to Output
Capacitance Model for Unshielded Optocouplers.
Figure 30. Optocoupler Input to Output
Capacitance Model for Shielded Optocouplers.
Figure 31. Equivalent Circuit for Figure 25 During Common Mode Transient.
Rg
1
3
V
SAT
–
2
4
8
6
7
5
+
V
CM
I
LEDP
C
LEDP
C
LEDN
SHIELD
* THE ARROWS INDICATE THE DIRECTION
OF CURRENT FLOW DURING
–
dV
CM
/dt.
+5 V
+
–
V
CC
= 18 V
0.1
μF
+
–
high state (assuming LED is
“ON”) with a typical delay, UVLO
TURN On Delay, of 0.8
μ
s.
IPM Dead Time and
Propagation Delay
Specifications
The HCPL-3150/315J includes a
Propagation Delay Difference
(PDD) specification intended to
help designers minimize “dead
time” in their power inverter
designs. Dead time is the time
period during which both the
high and low side power
transistors (Q1 and Q2 in Figure
25) are off. Any overlap in Q1
and Q2 conduction will result in
large currents flowing through
the power devices from the high-
to the low-voltage motor rails.
To minimize dead time in a given
design, the turn on of LED2
should be delayed (relative to the
turn off of LED1) so that under
worst-case conditions, transistor
Q1 has just turned off when
transistor Q2 turns on, as shown
in Figure 34. The amount of delay
necessary to achieve this condi-
tions is equal to the maximum
value of the propagation delay
difference specification, PDD
MAX
,
which is specified to be 350 ns
over the operating temperature
range of -40
°
C to 100
°
C.
Delaying the LED signal by the
maximum propagation delay
difference ensures that the
minimum dead time is zero, but it
does not tell a designer what the
maximum dead time will be. The
maximum dead time is equivalent
to the difference between the
maximum and minimum propaga-
tion delay difference specifica-
tions as shown in Figure 35. The
maximum dead time for the
HCPL-3150/315J is 700 ns
(= 350 ns - (-350 ns)) over an
operating temperature range of
-40
°
C to 100
°
C.
Note that the propagation delays
used to calculate PDD and dead
time are taken at equal tempera-
tures and test conditions since
the optocouplers under consider-
ation are typically mounted in
close proximity to each other and
are switching identical IGBTs.
相关PDF资料 |
PDF描述 |
|---|---|
| HCPL-315J-XXXE | 0.5 Amp Output Current IGBT Gate Drive Optocoupler |
| HCPL-3160 | 12 AMP MINIATURE POWER RELAY |
| HCPL-3180-060 | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| HCPL-3180-300 | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
| HCPL-3180-500 | Current, High Speed IGBT/MOSFET Gate Drive Optocoupler |
相关代理商/技术参数 |
参数描述 |
|---|---|
| HCPL-315J-500E | 功能描述:逻辑输出光电耦合器 0.5A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 绝缘电压:4243 Vrms 输出类型:Push-Pull 最大传播延迟时间:500 ns 最大正向二极管电压: 最大反向二极管电压: 最大正向二极管电流: 最大连续输出电流:2.5 A 最大功率耗散:100 mW 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:SO-16 封装:Tube |
| HCPL-316J | 功能描述:逻辑输出光电耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 绝缘电压:4243 Vrms 输出类型:Push-Pull 最大传播延迟时间:500 ns 最大正向二极管电压: 最大反向二极管电压: 最大正向二极管电流: 最大连续输出电流:2.5 A 最大功率耗散:100 mW 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:SO-16 封装:Tube |
| HCPL-316J#500 | 功能描述:逻辑输出光电耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 绝缘电压:4243 Vrms 输出类型:Push-Pull 最大传播延迟时间:500 ns 最大正向二极管电压: 最大反向二极管电压: 最大正向二极管电流: 最大连续输出电流:2.5 A 最大功率耗散:100 mW 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:SO-16 封装:Tube |
| HCPL-316J-000E | 功能描述:逻辑输出光电耦合器 2.0A IGBT Gate Drive RoHS:否 制造商:Fairchild Semiconductor 绝缘电压:4243 Vrms 输出类型:Push-Pull 最大传播延迟时间:500 ns 最大正向二极管电压: 最大反向二极管电压: 最大正向二极管电流: 最大连续输出电流:2.5 A 最大功率耗散:100 mW 最大工作温度:+ 100 C 最小工作温度:- 40 C 封装 / 箱体:SO-16 封装:Tube |
| HCPL-316J-000E | 制造商:Avago Technologies 功能描述:GATE DRIVE OPTOCOUPLERLF - LEAD FREE VE |
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